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Transistors / Power Field-Effect Transistors / IRFM150
Datasheets
IRFM150 by:

Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

Part Details for IRFM150 by Infineon Technologies AG

Overview of IRFM150 by Infineon Technologies AG

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Price & Stock for IRFM150

Part # Distributor Description Stock Price Buy
Future Electronics Single N-Channel 100 V 150 W 0.07 nC Hexfet Power Mosfet Flange Mount - TO-254AA RoHS: Non Compliant pbFree: No Min Qty: 5 Package Multiple: 1 Container: Bulk 0
Bulk
  • 1 $151.6600
  • 2 $149.9600
  • 4 $148.2700
  • 5 $147.7400
  • 15 $144.4400
$144.4400 / $151.6600 Buy Now

Part Details for IRFM150

IRFM150 CAD Models

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IRFM150 Part Data Attributes

Parametric Data
IRFM150 Infineon Technologies AG
Buy Now Datasheet
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IRFM150 Infineon Technologies AG Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 150 mJ
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code R-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 136 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFM150

This table gives cross-reference parts and alternative options found for IRFM150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM150-QR-BR1 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFM150-QR-BR1
2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM150 vs 2N7224
IRFM150-QR-BR1 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors IRFM150 vs IRFM150-QR-BR1
IRFM150-QR-B 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFM150-QR-B
JANHCA2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG IRFM150 vs JANHCA2N7224
IRFM150-JQR-BR1 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFM150-JQR-BR1
2N7224 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs 2N7224
JANTXV2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG IRFM150 vs JANTXV2N7224
IRFM150R1 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors IRFM150 vs IRFM150R1
JANTXV2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM150 vs JANTXV2N7224
Part Number Description Manufacturer Compare
2N7224-QR-EB 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs 2N7224-QR-EB
IRFM150 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors IRFM150 vs IRFM150
JANTX2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG IRFM150 vs JANTX2N7224
JANTXV2N7224U Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG IRFM150 vs JANTXV2N7224U
2N7218UR4 Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFM150 vs 2N7218UR4
IRFN140SMD-JQR-B 22A, 100V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFN140SMD-JQR-B
IRFN150SMDR4 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFN150SMDR4
2N7224 Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TT Electronics Resistors IRFM150 vs 2N7224
2N7218 Power Field-Effect Transistor, 28A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3 TT Electronics Resistors IRFM150 vs 2N7218
IRFN150R4 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, TO-220SM, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM150 vs IRFN150R4

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