Part Details for IRFM150 by International Rectifier
Overview of IRFM150 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFM150
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 1 |
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$102.4600 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 1 |
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$199.2113 | Buy Now |
Part Details for IRFM150
IRFM150 CAD Models
IRFM150 Part Data Attributes
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IRFM150
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFM150
International Rectifier
Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Package Description | FLANGE MOUNT, R-MSFM-P3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | R-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 136 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFM150
This table gives cross-reference parts and alternative options found for IRFM150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM150-QR-BR1 | 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM150 vs IRFM150-QR-BR1 |
2N7224 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | IRFM150 vs 2N7224 |
IRFM150-QR-BR1 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM150 vs IRFM150-QR-BR1 |
IRFM150-QR-B | 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM150 vs IRFM150-QR-B |
JANHCA2N7224 | Power Field-Effect Transistor, 34A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | IRFM150 vs JANHCA2N7224 |
IRFM150-JQR-BR1 | 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM150 vs IRFM150-JQR-BR1 |
2N7224 | 34A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM150 vs 2N7224 |
JANTXV2N7224 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | Infineon Technologies AG | IRFM150 vs JANTXV2N7224 |
IRFM150R1 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM150 vs IRFM150R1 |
JANTXV2N7224 | Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | International Rectifier | IRFM150 vs JANTXV2N7224 |