Part Details for IRG4RC20FPBF by Infineon Technologies AG
Overview of IRG4RC20FPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRG4RC20FPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70018479
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RS | 600V FAST 1-8 KHZ SINGLE IGBT IN A D-PAK PACKAGE | Infineon IRG4RC20FPBF RoHS: Not Compliant Min Qty: 525 Package Multiple: 1 Container: Bulk | 0 |
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$1.3900 / $1.7400 | RFQ |
Part Details for IRG4RC20FPBF
IRG4RC20FPBF CAD Models
IRG4RC20FPBF Part Data Attributes:
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IRG4RC20FPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRG4RC20FPBF
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | LEAD FREE, DPAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 22 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 340 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 66 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 706 ns | |
Turn-on Time-Nom (ton) | 51 ns |
Alternate Parts for IRG4RC20FPBF
This table gives cross-reference parts and alternative options found for IRG4RC20FPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC20FPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRG4RC20FTR | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC20FPBF vs IRG4RC20FTR |
IRG4RC20FTRR | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | IRG4RC20FPBF vs IRG4RC20FTRR |
IRG4RC20FTRLPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC20FPBF vs IRG4RC20FTRLPBF |
IRG4RC20FPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC20FPBF vs IRG4RC20FPBF |
IRG4RC20FTRPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRG4RC20FPBF vs IRG4RC20FTRPBF |
IRG4RC20FTRPBF | Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRG4RC20FPBF vs IRG4RC20FTRPBF |