Datasheets
IS61DDB24M18A-250M3L by: Integrated Silicon Solution Inc

DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

Part Details for IS61DDB24M18A-250M3L by Integrated Silicon Solution Inc

Overview of IS61DDB24M18A-250M3L by Integrated Silicon Solution Inc

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Price & Stock for IS61DDB24M18A-250M3L

Part # Distributor Description Stock Price Buy
DISTI # IS61DDB24M18A-250M3L-ND
DigiKey IC SRAM 72MBIT PARALLEL 165LFBGA Min Qty: 105 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 105 $47.3701
$47.3701 Buy Now
DISTI # IS61DDB24M18A-250M
Avnet Americas DDR-II (Burst 2) CIO Synchronous SRAM 72Mb 4Mx18 250MHz 1.8V 165-Pin FBGA Tray - Trays (Alt: IS61DDB24M18A-250M) RoHS: Compliant Min Qty: 105 Package Multiple: 105 Lead time: 28 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 870-61B24M18A250M3L
Mouser Electronics SRAM 72Mb, DDR II (Burst of 2) CIO, Sync SRAM, 4M x 18, 165 Ball FBGA (15x17 mm), RoHS RoHS: Compliant 0
  • 105 $45.9800
$45.9800 Order Now
DISTI # IS61DDB24M18A-250M
Avnet Americas DDR-II (Burst 2) CIO Synchronous SRAM 72Mb 4Mx18 250MHz 1.8V 165-Pin FBGA Tray - Trays (Alt: IS61DDB24M18A-250M) RoHS: Compliant Min Qty: 105 Package Multiple: 105 Lead time: 28 Weeks, 0 Days Container: Tray 0
RFQ

Part Details for IS61DDB24M18A-250M3L

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IS61DDB24M18A-250M3L Part Data Attributes:

IS61DDB24M18A-250M3L Integrated Silicon Solution Inc
Buy Now Datasheet
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IS61DDB24M18A-250M3L Integrated Silicon Solution Inc DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description LBGA,
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Factory Lead Time 28 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165
Length 17 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 18
Number of Functions 1
Number of Terminals 165
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX18
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.4 mm
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15 mm

Alternate Parts for IS61DDB24M18A-250M3L

This table gives cross-reference parts and alternative options found for IS61DDB24M18A-250M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61DDB24M18A-250M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8662D19BD-300I DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61DDB24M18A-250M3L vs GS8662D19BD-300I
CY7C1625KV18-200BZXI QDR SRAM, 16MX9, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, FBGA-165 Cypress Semiconductor IS61DDB24M18A-250M3L vs CY7C1625KV18-200BZXI
GS81302T07GE-450T DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology IS61DDB24M18A-250M3L vs GS81302T07GE-450T
K7I320884M-FC13 DDR SRAM, 4MX8, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor IS61DDB24M18A-250M3L vs K7I320884M-FC13
GS8662D20BD-350 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61DDB24M18A-250M3L vs GS8662D20BD-350
IS61QDPB24M18A-333M3 QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc IS61DDB24M18A-250M3L vs IS61QDPB24M18A-333M3
IS61DDB44M18A-300B4L DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc IS61DDB24M18A-250M3L vs IS61DDB44M18A-300B4L
IS61DDPB24M18A-450B4 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc IS61DDB24M18A-250M3L vs IS61DDPB24M18A-450B4
IS61DDPB44M18A-550M3LI DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc IS61DDB24M18A-250M3L vs IS61DDPB44M18A-550M3LI
MT57W4MH8JF-6 DDR SRAM, 4MX8, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Micron Technology Inc IS61DDB24M18A-250M3L vs MT57W4MH8JF-6

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