Datasheets
IS61QDB22M36-250M3L by: Integrated Silicon Solution Inc

DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, LFBGA-165

Part Details for IS61QDB22M36-250M3L by Integrated Silicon Solution Inc

Overview of IS61QDB22M36-250M3L by Integrated Silicon Solution Inc

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for IS61QDB22M36-250M3L

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IS61QDB22M36-250M3L Part Data Attributes

IS61QDB22M36-250M3L Integrated Silicon Solution Inc
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IS61QDB22M36-250M3L Integrated Silicon Solution Inc DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, LFBGA-165
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description LBGA, BGA165,11X15,40
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 17 mm
Memory Density 75497472 bit
Memory IC Type DDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V
Supply Current-Max 0.7 mA
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 15 mm

Alternate Parts for IS61QDB22M36-250M3L

This table gives cross-reference parts and alternative options found for IS61QDB22M36-250M3L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS61QDB22M36-250M3L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1514AV18-250BZXC QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor IS61QDB22M36-250M3L vs CY7C1514AV18-250BZXC
CY7C1514KV18-250BZXC QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165 Cypress Semiconductor IS61QDB22M36-250M3L vs CY7C1514KV18-250BZXC
GS8672Q36BE-250T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672Q36BE-250T
K7R643682M-FC250 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor IS61QDB22M36-250M3L vs K7R643682M-FC250
GS8662Q36BGD-250T QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8662Q36BGD-250T
GS8672Q36BE-250 Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672Q36BE-250
GS8662Q36BGD-250 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8662Q36BGD-250
IS61QDB22M36A-250M3 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc IS61QDB22M36-250M3L vs IS61QDB22M36A-250M3
GS8662Q36BD-250 QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8662Q36BD-250
IS61QDB22M36A-250M3L QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc IS61QDB22M36-250M3L vs IS61QDB22M36A-250M3L
Part Number Description Manufacturer Compare
GS8672D38AE-550I Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 17 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672D38AE-550I
GS8672Q38BE-450T QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672Q38BE-450T
CY7C1521V18-300BZI DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor IS61QDB22M36-250M3L vs CY7C1521V18-300BZI
GS8672D36BGE-333T Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672D36BGE-333T
K7I643682M-EI200 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor IS61QDB22M36-250M3L vs K7I643682M-EI200
GS8672T38BE-633 Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 GSI Technology IS61QDB22M36-250M3L vs GS8672T38BE-633
CY7C1565KV18-550BZXI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor IS61QDB22M36-250M3L vs CY7C1565KV18-550BZXI
CY7C1545V18-333BZXI QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor IS61QDB22M36-250M3L vs CY7C1545V18-333BZXI
UPD44644365F5-E37-FQ1 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, BGA-165 NEC Electronics Group IS61QDB22M36-250M3L vs UPD44644365F5-E37-FQ1
K7I643684M-FC250 DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor IS61QDB22M36-250M3L vs K7I643684M-FC250

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