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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1932
|
Newark | Mosfet, N-Ch, 100V, 44A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:44A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTY44N10T RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 288 |
|
$1.1000 / $2.4300 | Buy Now |
DISTI #
IXTY44N10T-ND
|
DigiKey | MOSFET N-CH 100V 44A TO252 Min Qty: 1 Lead time: 27 Weeks Container: Tube |
330 In Stock |
|
$1.0778 / $2.4800 | Buy Now |
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IXTY44N10T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTY44N10T
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | , | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 44 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 47 pF | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTY44N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY44N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF5N3710PBF | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IXTY44N10T vs IRF5N3710PBF |
SNN4010D | 45A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3/2 PIN | Kodenshi Sensing | IXTY44N10T vs SNN4010D |
IRF5N3710SCX | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IXTY44N10T vs IRF5N3710SCX |
IRF5N3710SCV | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IXTY44N10T vs IRF5N3710SCV |
IRF5N3710 | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IXTY44N10T vs IRF5N3710 |
HUF75637SMD05 | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Resistors | IXTY44N10T vs HUF75637SMD05 |
934057747127 | 49A, 100V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IXTY44N10T vs 934057747127 |
IXTP44N10T | Power Field-Effect Transistor, | Littelfuse Inc | IXTY44N10T vs IXTP44N10T |
HUF75637SMD05R | 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IXTY44N10T vs HUF75637SMD05R |
IRFN3710-JQR-B | 45A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IXTY44N10T vs IRFN3710-JQR-B |