Datasheets
K4S643232C-TC55 by:

Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Part Details for K4S643232C-TC55 by Samsung Semiconductor

Overview of K4S643232C-TC55 by Samsung Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Industrial Automation Computing and Data Storage Renewable Energy Robotics and Drones

Price & Stock for K4S643232C-TC55

Part # Distributor Description Stock Price Buy
Quest Components 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 192
  • 1 $14.7000
  • 28 $6.3700
  • 79 $5.8800
$5.8800 / $14.7000 Buy Now
Quest Components 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 40
  • 1 $14.7000
  • 8 $9.8000
  • 27 $9.0650
$9.0650 / $14.7000 Buy Now

Part Details for K4S643232C-TC55

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K4S643232C-TC55 Part Data Attributes:

K4S643232C-TC55 Samsung Semiconductor
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K4S643232C-TC55 Samsung Semiconductor Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
Pin Count 86
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 182 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G86
JESD-609 Code e0
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP86,.46,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4S643232C-TC55

This table gives cross-reference parts and alternative options found for K4S643232C-TC55. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232C-TC55, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48LC2M32B2P-55 Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 Micron Technology Inc K4S643232C-TC55 vs MT48LC2M32B2P-55
MT48LC2M32B2TG-55:G Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 Micron Technology Inc K4S643232C-TC55 vs MT48LC2M32B2TG-55:G
Part Number Description Manufacturer Compare
TC59S6432BFTL-10 IC 2M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86, 0.400 INCH, 0.50 MM PITCH, PLASTIC, TSOP-86, Dynamic RAM Toshiba America Electronic Components K4S643232C-TC55 vs TC59S6432BFTL-10
MB811643221A-125FN 2MX32 SYNCHRONOUS DRAM, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 FUJITSU Limited K4S643232C-TC55 vs MB811643221A-125FN
HY57V643220CLTP-P Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc K4S643232C-TC55 vs HY57V643220CLTP-P
HY57V643220CTP-P Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.5 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc K4S643232C-TC55 vs HY57V643220CTP-P
AS4SD2M32DGX-75IT Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, PLASTIC, TSOP2-86 Micross Components K4S643232C-TC55 vs AS4SD2M32DGX-75IT
KM432S2030BT-G/F8 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232C-TC55 vs KM432S2030BT-G/F8
K4S643234E-TC100 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232C-TC55 vs K4S643234E-TC100
V54C365324V-55 Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 Mosel Vitelic Corporation K4S643232C-TC55 vs V54C365324V-55
HY57V563220AT-H Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232C-TC55 vs HY57V563220AT-H
IS42S32200E-6TL 2MX32 SYNCHRONOUS DRAM, 5.5ns, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86 ABLIC Inc. K4S643232C-TC55 vs IS42S32200E-6TL

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