MRF176GV
Description: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN

Overview of MRF176GV by MACOM

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics

Price & Stock for MRF176GV by MACOM

Part # Manufacturer Description Stock Price Buy
DISTI # 1465-1171-ND
DigiKey RF MOSFET 50V 375-04 Min Qty: 1 Lead time: 26 Weeks Container: Tray 1
In Stock
  • 1 $207.4600
$207.4600 Buy Now
DISTI # 937-MRF176GV
Mouser Electronics RF MOSFET Transistors Transistor,150W,<500MHz,50V RoHS: Compliant 0
  • 10 $224.6000
  • 20 $219.9400
$219.9400 / $224.6000 Order Now
DISTI # MRF176GV
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 20 0
  • 20 $199.1600
$199.1600 Buy Now

CAD Models for MRF176GV by MACOM
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Part Data Attributes for MRF176GV by MACOM

MRF176GV
MACOM
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description
CASE 375-04, 4 PIN
Pin Count
4
Manufacturer Package Code
CASE 375-04
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
SOURCE
Configuration
COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min
125 V
Drain Current-Max (ID)
16 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F4
Number of Elements
2
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
400 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
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  1. MRF176GV
    MACOM
    RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
    VS

Alternate Parts for MRF176GV

This table gives cross-reference parts and alternative options found for MRF176GV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF176GV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MRF176GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC MRF176GV vs MRF176GV
Part Number Description Manufacturer Compare
MRF176GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity MRF176GV vs MRF176GV
BLF278 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN NXP Semiconductors MRF176GV vs BLF278
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN Motorola Semiconductor Products MRF176GV vs MRF151G
TP1940 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC MRF176GV vs TP1940
MRF151G 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN Motorola Mobility LLC MRF176GV vs MRF151G
VRF152GMP RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Microchip Technology Inc MRF176GV vs VRF152GMP
SD2932 300W - 50V HF/VHF DMOS PUSH-PULL TRANSISTOR STMicroelectronics MRF176GV vs SD2932
MRF176GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC MRF176GV vs MRF176GV
BLF278 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 Advanced Semiconductor Inc MRF176GV vs BLF278
SD2922 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 0.400 X 0.860 INCH, PLASTIC, M244, 4 PIN STMicroelectronics MRF176GV vs SD2922

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