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Part Details for MTD6N20ET4G by onsemi
Overview of MTD6N20ET4G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for MTD6N20ET4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45J1711
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Newark | N Channel Mosfet, 200V, 6A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi MTD6N20ET4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Bristol Electronics | 200 |
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RFQ | ||
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Quest Components | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET | 160 |
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$7.5075 / $13.6500 | Buy Now |
Part Details for MTD6N20ET4G
MTD6N20ET4G CAD Models
MTD6N20ET4G Part Data Attributes:
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MTD6N20ET4G
onsemi
Buy Now
Datasheet
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Compare Parts:
MTD6N20ET4G
onsemi
Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD6N20ET4G
This table gives cross-reference parts and alternative options found for MTD6N20ET4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD6N20ET4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD5N25E | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD6N20ET4G vs MTD5N25E |
| MTD6N20E-T4 | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Rochester Electronics LLC | MTD6N20ET4G vs MTD6N20E-T4 |
| MTD6N20ET4 | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Rochester Electronics LLC | MTD6N20ET4G vs MTD6N20ET4 |
| MTD5N25ET4 | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | onsemi | MTD6N20ET4G vs MTD5N25ET4 |
| MTD5N25ET4 | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD6N20ET4G vs MTD5N25ET4 |
| MTD6N20E-T4 | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD6N20ET4G vs MTD6N20E-T4 |
| MTD6N20E-T4 | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | onsemi | MTD6N20ET4G vs MTD6N20E-T4 |
| MTD5N25E-T4 | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD6N20ET4G vs MTD5N25E-T4 |
| MTD6N20E | 6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Rochester Electronics LLC | MTD6N20ET4G vs MTD6N20E |
| MTD5N25ET4 | 5A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Rochester Electronics LLC | MTD6N20ET4G vs MTD5N25ET4 |