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MUPTB28 by:

Trans Voltage Suppressor Diode,

Part Details for MUPTB28 by Microsemi Corporation

Overview of MUPTB28 by Microsemi Corporation

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Applications Consumer Electronics Environmental Monitoring Industrial Automation Aerospace and Defense Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Telecommunications Communication and Networking

Part Details for MUPTB28

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MUPTB28 Part Data Attributes

MUPTB28 Microsemi Corporation
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MUPTB28 Microsemi Corporation Trans Voltage Suppressor Diode,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 31 V
Clamping Voltage-Max 47.8 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA
JESD-30 Code S-PSSO-G1
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1000 W
Number of Elements 1
Number of Terminals 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity BIDIRECTIONAL
Power Dissipation-Max 2.5 W
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 28 V
Reverse Current-Max 1 µA
Reverse Test Voltage 28 V
Surface Mount YES
Technology AVALANCHE
Terminal Form GULL WING
Terminal Position SINGLE

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