Part Details for NT5DS16M16CS-6K by Nanya Technology Corporation
Overview of NT5DS16M16CS-6K by Nanya Technology Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Price & Stock for NT5DS16M16CS-6K
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | 4600 |
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RFQ | ||
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New Advantage Corporation | IC-RAM 256Mb 16Mx16 DDR-333 C-die T&R NANYA RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 300 |
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$4.2600 / $4.5600 | Buy Now |
Part Details for NT5DS16M16CS-6K
NT5DS16M16CS-6K CAD Models
NT5DS16M16CS-6K Part Data Attributes:
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NT5DS16M16CS-6K
Nanya Technology Corporation
Buy Now
Datasheet
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Compare Parts:
NT5DS16M16CS-6K
Nanya Technology Corporation
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e3 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 10.16 mm |
Alternate Parts for NT5DS16M16CS-6K
This table gives cross-reference parts and alternative options found for NT5DS16M16CS-6K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS16M16CS-6K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K4H561638J-LCB3T00 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | NT5DS16M16CS-6K vs K4H561638J-LCB3T00 |
| V58C2256164SALI-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | NT5DS16M16CS-6K vs V58C2256164SALI-6 |
| V58C2256164SALD-6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, DIE-STACKED, TSOP2-66 | ProMOS Technologies Inc | NT5DS16M16CS-6K vs V58C2256164SALD-6 |
| V58C2256164SAT6 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | NT5DS16M16CS-6K vs V58C2256164SAT6 |
| N2DS25H16BT-6K | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Nanya Technology Corporation | NT5DS16M16CS-6K vs N2DS25H16BT-6K |
| W9425G6JH-5I | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 | Winbond Electronics Corp | NT5DS16M16CS-6K vs W9425G6JH-5I |
| NT5DS16M16CS-6KI | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, TSOP2-66 | Nanya Technology Corporation | NT5DS16M16CS-6K vs NT5DS16M16CS-6KI |
| HY5DU561622FTP-5I | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | NT5DS16M16CS-6K vs HY5DU561622FTP-5I |
| MT46V16M16TG-6TITH | 16MX16 DDR DRAM, 0.7ns, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | NT5DS16M16CS-6K vs MT46V16M16TG-6TITH |
| MT46V16M16P-6R | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | NT5DS16M16CS-6K vs MT46V16M16P-6R |