Part Details for PHB110NQ08T by Nexperia
Overview of PHB110NQ08T by Nexperia
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Price & Stock for PHB110NQ08T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
PHB110NQ08T,118
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Avnet Americas | Trans MOSFET N-CH 75V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB110NQ08T,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.1017 / $1.3150 | Buy Now |
Part Details for PHB110NQ08T
PHB110NQ08T CAD Models
PHB110NQ08T Part Data Attributes:
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PHB110NQ08T
Nexperia
Buy Now
Datasheet
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Compare Parts:
PHB110NQ08T
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Date Of Intro | 2017-02-01 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHB110NQ08T
This table gives cross-reference parts and alternative options found for PHB110NQ08T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB110NQ08T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934058279127 | Power Field-Effect Transistor | Nexperia | PHB110NQ08T vs 934058279127 |
| 934056371118 | Power Field-Effect Transistor | Nexperia | PHB110NQ08T vs 934056371118 |
| BUK769R6-80E | Power Field-Effect Transistor | Nexperia | PHB110NQ08T vs BUK769R6-80E |
| BUK7609-75A | Power Field-Effect Transistor | Nexperia | PHB110NQ08T vs BUK7609-75A |
| BUK769R6-80E,118 | N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin | Nexperia | PHB110NQ08T vs BUK769R6-80E,118 |
| 934058279118 | Power Field-Effect Transistor | Nexperia | PHB110NQ08T vs 934058279118 |