Datasheets
SI2308BDS-T1-GE3 by:

Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,

Part Details for SI2308BDS-T1-GE3 by Vishay Intertechnologies

Overview of SI2308BDS-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SI2308BDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 47Y1306
Newark Mosfet Transistor, N Channel, 2.3 A, 60 V, 0.13 Ohm, 10 V, 3 V Rohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 59773
  • 1 $0.5410
  • 25 $0.4720
  • 50 $0.4130
  • 100 $0.3530
  • 250 $0.3150
  • 500 $0.2770
$0.2770 / $0.5410 Buy Now
DISTI # 16P3708
Newark N Channel Mosfet, 60V, 2.3A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 14127
  • 1 $0.2190
  • 25 $0.2190
  • 50 $0.2190
  • 100 $0.2190
  • 250 $0.2190
  • 500 $0.2000
$0.2000 / $0.2190 Buy Now
DISTI # 81AC9913
Newark N-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SI2308BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 30000
  • 1 $0.1820
$0.1820 Buy Now
DISTI # 71T8044
Newark N Channel Mosfet, 60V, 2.3A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.1860
  • 6,000 $0.1780
  • 12,000 $0.1700
  • 18,000 $0.1650
  • 30,000 $0.1600
$0.1600 / $0.1860 Buy Now
DISTI # SI2308BDS-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 30000
  • 3,000 $0.1815
  • 6,000 $0.1756
  • 12,000 $0.1698
  • 18,000 $0.1640
  • 24,000 $0.1576
  • 30,000 $0.1502
  • 300,000 $0.1428
$0.1428 / $0.1815 Buy Now
DISTI # 16P3708
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3708) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 1 Days Container: Ammo Pack 14127 Partner Stock
  • 1 $0.5640
  • 25 $0.4510
  • 50 $0.3960
  • 100 $0.3410
  • 250 $0.3050
$0.3050 / $0.5640 Buy Now
DISTI # 781-SI2308BDS-T1-GE3
Mouser Electronics MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant 326026
  • 1 $0.5300
  • 10 $0.4400
  • 100 $0.3160
  • 500 $0.2460
  • 1,000 $0.2000
  • 3,000 $0.1690
  • 9,000 $0.1570
  • 24,000 $0.1520
  • 45,000 $0.1510
$0.1510 / $0.5300 Buy Now
Future Electronics SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 234000
Reel
  • 3,000 $0.1630
  • 6,000 $0.1600
  • 9,000 $0.1580
  • 15,000 $0.1560
  • 30,000 $0.1510
$0.1510 / $0.1630 Buy Now
Future Electronics SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel 1
Cut Tape/Mini-Reel
  • 1 $0.5050
  • 15 $0.4200
  • 75 $0.3700
  • 300 $0.3250
  • 1,500 $0.2750
$0.2750 / $0.5050 Buy Now
Future Electronics SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1480
  • 6,000 $0.1450
  • 9,000 $0.1440
  • 15,000 $0.1420
  • 30,000 $0.1370
$0.1370 / $0.1480 Buy Now
Bristol Electronics   3562
RFQ
Quest Components 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 1148
  • 1 $1.0000
  • 21 $0.3000
  • 168 $0.2000
$0.2000 / $1.0000 Buy Now
Quest Components 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 18
  • 1 $0.5250
  • 11 $0.4200
$0.4200 / $0.5250 Buy Now
Quest Components 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB 2400
  • 1 $1.1400
  • 352 $0.4560
  • 1,755 $0.3990
$0.3990 / $1.1400 Buy Now
DISTI # SI2308BDS-T1-GE3
TTI MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 39000
In Stock
  • 3,000 $0.1630
  • 6,000 $0.1590
  • 9,000 $0.1550
  • 15,000 $0.1520
  • 30,000 $0.1490
  • 300,000 $0.1420
$0.1420 / $0.1630 Buy Now
DISTI # SI2308BDS-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 30000
  • 3,000 $0.1815
  • 6,000 $0.1756
  • 12,000 $0.1698
  • 18,000 $0.1640
  • 24,000 $0.1576
  • 30,000 $0.1502
  • 300,000 $0.1428
$0.1428 / $0.1815 Buy Now
DISTI # 16P3708
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3708) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 1 Days Container: Ammo Pack 14127 Partner Stock
  • 1 $0.5640
  • 25 $0.4510
  • 50 $0.3960
  • 100 $0.3410
  • 250 $0.3050
$0.3050 / $0.5640 Buy Now
DISTI # SI2308BDS-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 1.8A, 1.06W, SOT23 Min Qty: 1 24037
  • 1 $0.5160
  • 3 $0.4510
  • 10 $0.4080
  • 25 $0.3670
  • 100 $0.3220
  • 250 $0.2750
  • 500 $0.2360
  • 1,000 $0.1840
  • 3,000 $0.1770
$0.1770 / $0.5160 Buy Now
DISTI # SI2308BDS-T1-GE3
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 30000
  • 3,000 $0.1815
  • 6,000 $0.1756
  • 12,000 $0.1698
  • 18,000 $0.1640
  • 24,000 $0.1576
  • 30,000 $0.1502
  • 300,000 $0.1428
$0.1428 / $0.1815 Buy Now
DISTI # 16P3708
Avnet Americas Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 16P3708) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 1 Days Container: Ammo Pack 14127 Partner Stock
  • 1 $0.5640
  • 25 $0.4510
  • 50 $0.3960
  • 100 $0.3410
  • 250 $0.3050
$0.3050 / $0.5640 Buy Now
DISTI # TMOSS6321
Rutronik N-CHAN.-FET 2,3A 60V SOT23 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel Stock DE - 12000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 3,000 $0.2102
  • 6,000 $0.1982
  • 9,000 $0.1862
  • 12,000 $0.1682
  • 15,000 $0.1622
$0.1622 / $0.2102 Buy Now
DISTI # SMC-SI2308BDS-T1-GE3
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 2350
RFQ
DISTI # SI2308BDS-T1-GE3
Avnet Asia Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED Package/EnclosureTO-236-3,SC-59,SOT-23-3 fet typeN-Channel Operating temperature-55C~150CTJ Gate voltage Vgs20V Drain-source voltage Vds60V 71902
  • 40 $0.2591
  • 100 $0.1998
  • 1,000 $0.1651
  • 2,000 $0.1502
$0.1502 / $0.2591 Buy Now
CHIPMALL.COM LIMITED 60V 2.3A 156m@10V,1.9A 3V@250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS 5685
  • 5 $0.2652
  • 50 $0.2174
  • 150 $0.1968
  • 500 $0.1712
  • 3,000 $0.1260
  • 6,000 $0.1192
$0.1192 / $0.2652 Buy Now
Chips Pulse Industry Limited Purchase Online, Ship Immediately 10633
  • 1 $0.1306
  • 1,000 $0.1265
$0.1265 / $0.1306 Buy Now
DISTI # SI2308BDS-T1-GE3
EBV Elektronik Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 0 Days EBV - 1335000
Buy Now
DISTI # 1838997
element14 Asia-Pacific MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant Min Qty: 5 Container: Cut Tape 73900
  • 5 $0.4858
  • 50 $0.4249
  • 100 $0.3633
  • 500 $0.2209
  • 1,500 $0.2165
$0.2165 / $0.4858 Buy Now
DISTI # 1838997RL
element14 Asia-Pacific MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant Min Qty: 100 Container: Reel 73900
  • 100 $0.3633
  • 500 $0.2209
  • 1,500 $0.2165
$0.2165 / $0.3633 Buy Now
DISTI # 1794782
element14 Asia-Pacific MOSFET, N CH, 60V, 2.3A, TO236 RoHS: Compliant Min Qty: 5 Container: Each 0
  • 5 $0.5460
  • 10 $0.4763
  • 100 $0.3559
  • 500 $0.2789
  • 1,000 $0.1959
  • 5,000 $0.1710
$0.1710 / $0.5460 Buy Now
DISTI # 1838997RL
Farnell MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant Min Qty: 100 Lead time: 9 Weeks, 1 Days Container: Reel 59773
  • 100 $0.3804
  • 500 $0.2313
  • 1,500 $0.2275
$0.2275 / $0.3804 Buy Now
DISTI # 1838997
Farnell MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant Min Qty: 5 Lead time: 9 Weeks, 1 Days Container: Cut Tape 59773
  • 5 $0.5674
  • 50 $0.4739
  • 100 $0.3804
  • 500 $0.2313
  • 1,500 $0.2275
$0.2275 / $0.5674 Buy Now
DISTI # 4320170
Farnell MOSFET, N-CH, 60V, 2.3A, TO-236 RoHS: Compliant Min Qty: 3000 Lead time: 9 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.2224
  • 9,000 $0.1946
$0.1946 / $0.2224 Buy Now
DISTI # 1794782
Farnell MOSFET, N CH, 60V, 2.3A, TO236 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each 0
  • 1 $0.2035
  • 10 $0.1984
  • 100 $0.1934
  • 500 $0.1883
  • 1,000 $0.1832
  • 5,000 $0.1782
$0.1782 / $0.2035 Buy Now
LCSC 60V 2.3A 156m10V1.9A 3V250uA 1PCSNChannel SOT-23-3 MOSFETs ROHS 5685
  • 5 $0.2706
  • 50 $0.2218
  • 150 $0.2008
  • 500 $0.1747
  • 3,000 $0.1286
  • 6,000 $0.1216
$0.1216 / $0.2706 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 36500
  • 3,000 $0.1700
  • 6,000 $0.1500
$0.1500 / $0.1700 Buy Now

Part Details for SI2308BDS-T1-GE3

SI2308BDS-T1-GE3 CAD Models

SI2308BDS-T1-GE3 Part Data Attributes

SI2308BDS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2308BDS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
Factory Lead Time 8 Weeks, 1 Day
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.156 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.66 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2308BDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2308BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2308BDS-T1-E3 TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3
SI2308CDS-T1-GE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies SI2308BDS-T1-GE3 vs SI2308CDS-T1-GE3
SI2308BDS-T1-E3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Vishay Intertechnologies SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3
Part Number Description Manufacturer Compare
IRFL014N Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG SI2308BDS-T1-GE3 vs IRFL014N
SI2308CDS-T1-GE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies SI2308BDS-T1-GE3 vs SI2308CDS-T1-GE3
SI2308BDS-T1-E3 TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal Vishay Siliconix SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3
IRFL014NPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG SI2308BDS-T1-GE3 vs IRFL014NPBF
SI2308BDS-T1-E3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Vishay Intertechnologies SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3

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