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Transistors / Small Signal Field-Effect Transistors / SI2308BDS-T1-GE3
Datasheets
SI2308BDS-T1-GE3 by:

Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,

Part Details for SI2308BDS-T1-GE3 by Vishay Intertechnologies

Results Overview of SI2308BDS-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2308BDS-T1-GE3 Information

SI2308BDS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2308BDS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 16P3708
Newark N Channel Mosfet, 60V, 2.3A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 13120
  • 1 $0.2020
$0.2020 Buy Now
DISTI # 71T8044
Newark N Channel Mosfet, 60V, 2.3A, To-236, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:2.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3Vrohs Compliant: Yes |Vishay SI2308BDS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.6000
  • 2 $0.5620
  • 4 $0.5240
  • 6 $0.4860
  • 10 $0.4480
$0.4480 / $0.6000 Buy Now
DISTI # SI2308BDS-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 1.8A, 1.06W, SOT23 Min Qty: 1 2833
  • 1 $0.4920
  • 3 $0.4310
  • 10 $0.3900
  • 25 $0.3510
  • 100 $0.3080
  • 250 $0.2630
  • 500 $0.2260
  • 1,000 $0.1750
  • 3,000 $0.1690
$0.1690 / $0.4920 Buy Now
DISTI # SMC-SI2308BDS-T1-GE3
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 4752
RFQ
Chip 1 Exchange INSTOCK 66899
RFQ
Chip-Germany GmbH   RoHS: Not Compliant 3021
RFQ
DISTI # SI2308BDS-T1-GE3
EBV Elektronik N-CHANNEL 60-V (D-S) MOSFET (Alt: SI2308BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 2.3A 0.15610V2.3A 1.09W 1V 1 N-channel SOT-23-3 MOSFETs ROHS 6315
  • 5 $0.2425
  • 50 $0.1963
  • 150 $0.1766
  • 500 $0.1519
  • 3,000 $0.1137
  • 6,000 $0.1071
$0.1071 / $0.2425 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 36500
  • 3,000 $0.1700
  • 6,000 $0.1500
$0.1500 / $0.1700 Buy Now

Part Details for SI2308BDS-T1-GE3

SI2308BDS-T1-GE3 CAD Models

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SI2308BDS-T1-GE3 Part Data Attributes

Parametric Data
SI2308BDS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2308BDS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.156 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.66 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2308BDS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2308BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI2308BDS-T1-GE3 Vishay Siliconix Check for Price TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal SI2308BDS-T1-GE3 vs SI2308BDS-T1-GE3
Part Number Manufacturer Composite Price Description Compare
SI2308BDS-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal SI2308BDS-T1-GE3 vs SI2308BDS-T1-E3
SI2308BDS-T1-BE3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, SI2308BDS-T1-GE3 vs SI2308BDS-T1-BE3

SI2308BDS-T1-GE3 Related Parts

SI2308BDS-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2308BDS-T1-GE3 is a 5-pin SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a thermal pad size of 2.5 mm x 2.5 mm.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5 V and 5.5 V, and the enable pin (EN) to a logic-level signal or a pull-up resistor to VIN. Also, ensure the output pin (OUT) is properly decoupled with a 1 μF ceramic capacitor.

  • The SI2308BDS-T1-GE3 has an operating temperature range of -40°C to 125°C, making it suitable for a wide range of industrial and automotive applications.

  • To protect the SI2308BDS-T1-GE3, use a voltage regulator or a transient voltage suppressor (TVS) to limit the input voltage to within the recommended range. Additionally, consider adding a current-limiting resistor or a fuse to prevent overcurrent conditions.

  • Yes, the SI2308BDS-T1-GE3 is AEC-Q100 qualified, making it suitable for automotive applications. However, ensure that the device is used within the recommended operating conditions and follows the guidelines outlined in the datasheet.

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