Datasheets
SI3469DV-T1-E3 by:

Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R

Part Details for SI3469DV-T1-E3 by Vishay Siliconix

Overview of SI3469DV-T1-E3 by Vishay Siliconix

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Smart Cities Electronic Manufacturing

Price & Stock for SI3469DV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3469DV-T1-E3CT-ND
DigiKey MOSFET P-CH 20V 5A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 13980
In Stock
  • 1 $0.6400
  • 10 $0.5510
  • 100 $0.3818
  • 500 $0.3190
  • 1,000 $0.2715
  • 3,000 $0.2418
  • 6,000 $0.2291
  • 9,000 $0.2121
  • 30,000 $0.2100
$0.2100 / $0.6400 Buy Now
DISTI # 70026205
RS P-CHANNEL 20-V (D-S) MOSFET | Siliconix / Vishay SI3469DV-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.6400
  • 30,000 $0.6100
  • 150,000 $0.5800
  • 300,000 $0.5400
$0.5400 / $0.6400 RFQ
Quest Components SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 34
  • 1 $0.4800
  • 11 $0.4000
$0.4000 / $0.4800 Buy Now

Part Details for SI3469DV-T1-E3

SI3469DV-T1-E3 CAD Models

SI3469DV-T1-E3 Part Data Attributes:

SI3469DV-T1-E3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI3469DV-T1-E3 Vishay Siliconix Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.14 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI3469DV-T1-E3

This table gives cross-reference parts and alternative options found for SI3469DV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3469DV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC604P Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs FDC604P
SI3469DV-T1-E3 Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 Vishay Intertechnologies SI3469DV-T1-E3 vs SI3469DV-T1-E3
FDC604P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL onsemi SI3469DV-T1-E3 vs FDC604P
STT5PF20V 5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6 STMicroelectronics SI3469DV-T1-E3 vs STT5PF20V
SI3445DVD87Z Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs SI3445DVD87Z
SI3445DV Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs SI3445DV
SI3445DV 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC SI3469DV-T1-E3 vs SI3445DV
SI3445DV_NL Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs SI3445DV_NL
SI3445DVS62Z Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs SI3445DVS62Z
SI3469DV-T1-GE3 Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 Vishay Intertechnologies SI3469DV-T1-E3 vs SI3469DV-T1-GE3
Part Number Description Manufacturer Compare
FDC604P Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs FDC604P
FDC604P P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL onsemi SI3469DV-T1-E3 vs FDC604P
SI3469DV-T1-E3 Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 Vishay Intertechnologies SI3469DV-T1-E3 vs SI3469DV-T1-E3
SI3493BDV-T1-GE3 Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies SI3469DV-T1-E3 vs SI3493BDV-T1-GE3
FDC602P P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL onsemi SI3469DV-T1-E3 vs FDC602P
SI3445DVS62Z Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation SI3469DV-T1-E3 vs SI3445DVS62Z
PMN48XP,115 PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET@en-us TSOP 6-Pin Nexperia SI3469DV-T1-E3 vs PMN48XP,115
PMN48XP,125 PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET@en-us TSOP 6-Pin Nexperia SI3469DV-T1-E3 vs PMN48XP,125
FDC640P P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ, 3000-REEL onsemi SI3469DV-T1-E3 vs FDC640P
SI3493DV-T1-E3 TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal Vishay Siliconix SI3469DV-T1-E3 vs SI3493DV-T1-E3

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