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Part Details for SI5457DC-T1-GE3 by Vishay Siliconix
Overview of SI5457DC-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI5457DC-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI5457DC-T1-GE3CT-ND
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DigiKey | MOSFET P-CH 20V 6A 1206-8 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
24178 In Stock |
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$0.1603 / $0.5500 | Buy Now |
Part Details for SI5457DC-T1-GE3
SI5457DC-T1-GE3 CAD Models
SI5457DC-T1-GE3 Part Data Attributes
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SI5457DC-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI5457DC-T1-GE3
Vishay Siliconix
Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 195 pF | |
| JESD-30 Code | R-PDSO-C8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.7 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 85 ns | |
| Turn-on Time-Max (ton) | 90 ns |
Alternate Parts for SI5457DC-T1-GE3
This table gives cross-reference parts and alternative options found for SI5457DC-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI5457DC-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI5441DC-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5457DC-T1-GE3 vs SI5441DC-T1-E3 |
| SI5441BDC-T1-GE3 | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5457DC-T1-GE3 vs SI5441BDC-T1-GE3 |
| SI5433DC-T1-E3 | Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 1206-8, CHIPFET-8 | Vishay Siliconix | SI5457DC-T1-GE3 vs SI5433DC-T1-E3 |
| SI5441BDC-T1-GE3 | TRANSISTOR 4400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 1206-8, CHIPFET-8, FET General Purpose Small Signal | Vishay Siliconix | SI5457DC-T1-GE3 vs SI5441BDC-T1-GE3 |
| SI5441DC | Transistor | Vishay Siliconix | SI5457DC-T1-GE3 vs SI5441DC |
| SI5441BDC-T1-E3 | Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5457DC-T1-GE3 vs SI5441BDC-T1-E3 |
| SI5433BDC-T1-E3 | Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5457DC-T1-GE3 vs SI5433BDC-T1-E3 |
| SI5441DC-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 1206-8, CHIPFET-8 | Vishay Intertechnologies | SI5457DC-T1-GE3 vs SI5441DC-T1-E3 |
| SI5441DC-T1 | Transistor, | Vishay Siliconix | SI5457DC-T1-GE3 vs SI5441DC-T1 |