Part Details for SI8409DB-T1-E1 by Vishay Siliconix
Overview of SI8409DB-T1-E1 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI8409DB-T1-E1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI8409DB-T1-E1CT-ND
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DigiKey | MOSFET P-CH 30V 4.6A 4MICROFOOT Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7973 In Stock |
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$0.4008 / $1.0700 | Buy Now |
Part Details for SI8409DB-T1-E1
SI8409DB-T1-E1 CAD Models
SI8409DB-T1-E1 Part Data Attributes:
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SI8409DB-T1-E1
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI8409DB-T1-E1
Vishay Siliconix
Trans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R
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Pbfree Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | CSP | |
Package Description | GRID ARRAY, S-PBGA-B4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.6 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PBGA-B4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2.77 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | BALL | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI8409DB-T1-E1
This table gives cross-reference parts and alternative options found for SI8409DB-T1-E1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI8409DB-T1-E1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SSM3J334R | TRANSISTOR 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-3Z1A, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | SI8409DB-T1-E1 vs SSM3J334R |
SSM3J334R,LMITF(A | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Toshiba America Electronic Components | SI8409DB-T1-E1 vs SSM3J334R,LMITF(A |
SI8409DB-T1-E1 | Small Signal Field-Effect Transistor, 4.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, CSP-4 | Vishay Intertechnologies | SI8409DB-T1-E1 vs SI8409DB-T1-E1 |
DMP3085LSS-13 | Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Diodes Incorporated | SI8409DB-T1-E1 vs DMP3085LSS-13 |
SSM3J334R,LF(A | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Toshiba America Electronic Components | SI8409DB-T1-E1 vs SSM3J334R,LF(A |
SSM3J334R,LSINDF(A | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Toshiba America Electronic Components | SI8409DB-T1-E1 vs SSM3J334R,LSINDF(A |