SIHFL9014TR-GE3
|
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN
|
Vishay Intertechnologies
|
SIHFL9014TR-GE3 vs SIHFL9014TR-GE3
|
BSP171PL6327HTSA1
|
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
|
Infineon Technologies AG
|
SIHFL9014TR-GE3 vs BSP171PL6327HTSA1
|
BSP171PH6327XTSA1
|
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
|
Infineon Technologies AG
|
SIHFL9014TR-GE3 vs BSP171PH6327XTSA1
|
BSP171PH6327
|
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
|
Infineon Technologies AG
|
SIHFL9014TR-GE3 vs BSP171PH6327
|
IRFL9014PBF
|
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
|
Vishay Intertechnologies
|
SIHFL9014TR-GE3 vs IRFL9014PBF
|
IRFL9014
|
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
|
Vishay Intertechnologies
|
SIHFL9014TR-GE3 vs IRFL9014
|
IRFL9014TR
|
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
|
Vishay Intertechnologies
|
SIHFL9014TR-GE3 vs IRFL9014TR
|
IRFL9014TRPBF
|
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
SIHFL9014TR-GE3 vs IRFL9014TRPBF
|