Part Details for SIHU3N50D-E3 by Vishay Intertechnologies
Overview of SIHU3N50D-E3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHU3N50D-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99W9517
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Newark | Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHU3N50D-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3450 / $0.4070 | Buy Now |
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DISTI #
08X3794
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Newark | Mosfet, N Channel, 500V, 3A, To-251Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Vishay SIHU3N50D-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5080 | Buy Now |
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DISTI #
SIHU3N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3499 / $0.4445 | Buy Now |
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DISTI #
78-SIHU3N50D-E3
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Mouser Electronics | MOSFET 500V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant | 0 |
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$0.3410 / $0.3570 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.3460 | Buy Now |
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DISTI #
SIHU3N50D-E3
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TTI | MOSFET 500V Vds 30V Vgs IPAK (TO-251) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.3240 / $0.3480 | Buy Now |
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DISTI #
SIHU3N50D-E3
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Avnet Americas | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA - Tape and Reel (Alt: SIHU3N50D-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.3499 / $0.4445 | Buy Now |
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DISTI #
SIHU3N50D-E3
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EBV Elektronik | Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-251AA (Alt: SIHU3N50D-E3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 1 Weeks, 2 Days | EBV - 0 |
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Buy Now |
Part Details for SIHU3N50D-E3
SIHU3N50D-E3 CAD Models
SIHU3N50D-E3 Part Data Attributes:
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SIHU3N50D-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHU3N50D-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 10.4 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 3.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 5.5 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHU3N50D-E3
This table gives cross-reference parts and alternative options found for SIHU3N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHU3N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1721(2-10S1B) | TRANSISTOR 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SIHU3N50D-E3 vs 2SK1721(2-10S1B) |
| SIHD3N50D-E3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHU3N50D-E3 vs SIHD3N50D-E3 |
| SIHU3N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHU3N50D-E3 vs SIHU3N50D-GE3 |
| SIHD3N50DT5-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHU3N50D-E3 vs SIHD3N50DT5-GE3 |
| SIHU3N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHU3N50D-E3 vs SIHU3N50D-E3 |
| SIHD3N50DT4-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHU3N50D-E3 vs SIHD3N50DT4-GE3 |
| SIHD3N50D-GE3 | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHU3N50D-E3 vs SIHD3N50D-GE3 |
| 2SK1721(2-10S2B) | TRANSISTOR 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | SIHU3N50D-E3 vs 2SK1721(2-10S2B) |
| SIHD3N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHU3N50D-E3 vs SIHD3N50D-E3 |