| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP506B | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD18N55M5 vs NDP506B |
| IXFH26N50Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STD18N55M5 vs IXFH26N50Q |
| STP3NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD18N55M5 vs STP3NB80 |
| 934057024118 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 75A I(D), 30V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD18N55M5 vs 934057024118 |
| STP7NE10 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD18N55M5 vs STP7NE10 |
| IRF610B_FP001 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD18N55M5 vs IRF610B_FP001 |
| NTP15N40 | onsemi | Check for Price | Power Field-Effect Transistor, 15A I(D), 400V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD18N55M5 vs NTP15N40 |
| FDP18N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD18N55M5 vs FDP18N50 |
| PHD3055L | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD18N55M5 vs PHD3055L |
| IPD90N06S4L06ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STD18N55M5 vs IPD90N06S4L06ATMA1 |
Part Details for STD18N55M5 by STMicroelectronics
Results Overview of STD18N55M5 by STMicroelectronics
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
STD18N55M5 Information
STD18N55M5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD18N55M5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T3339
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Newark | Mosfet, N Ch, 550V, 13A, Dpak, |Stmicroelectronics STD18N55M5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1293 |
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$2.1800 / $4.6300 | Buy Now |
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DISTI #
497-STD18N55M5CT-ND
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DigiKey | MOSFET N-CH 550V 16A DPAK Min Qty: 1 Container: Cut Tape |
2225 Cut Tape |
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$1.5298 / $4.0300 | Buy Now |
|
DISTI #
497-STD18N55M5DKR-ND
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DigiKey | MOSFET N-CH 550V 16A DPAK Min Qty: 1 Container: Digi-Reel |
2225 Digi-Reel® |
|
$1.5298 / $4.0300 | Buy Now |
|
DISTI #
497-STD18N55M5TR-ND
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DigiKey | MOSFET N-CH 550V 16A DPAK Min Qty: 2500 Container: Tape & Reel |
0 Tape & Reel |
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$1.2499 / $1.2865 | Buy Now |
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DISTI #
511-STD18N55M5
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Mouser Electronics | MOSFETs N-Ch 550V 0.18 13A MDmesh M5 Power MOS RoHS: Compliant | 1922 |
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$1.4400 / $4.0300 | Buy Now |
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STMicroelectronics | N-channel 550 V, 150 mOhm typ., 16 A MDmesh M5 Power MOSFET in a DPAK package COO: Italy Min Qty: 1 | 1921 |
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$1.5300 / $4.0300 | Buy Now |
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Future Electronics | N-Channel 550 V 0.18 mOhm 13 A 90 W Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks Container: Reel | 0Reel |
|
$2.2300 | Buy Now |
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DISTI #
STD18N55M5
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TME | Transistor: N-MOSFET, unipolar, 600V, 16A, 110W, DPAK Min Qty: 2500 | 0 |
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$1.7400 | RFQ |
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Chip Stock | Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes | 18552 |
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RFQ | |
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Sense Electronic Company Limited | TO-252-3 | 9980 |
|
RFQ |
STD18N55M5 CAD Models
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STD18N55M5 Part Data Attributes
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STD18N55M5
STMicroelectronics
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Datasheet
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STD18N55M5
STMicroelectronics
Power Field-Effect Transistor, 14A I(D), 550V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Dpak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 210 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 550 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.21 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3.6 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD18N55M5
This table gives cross-reference parts and alternative options found for STD18N55M5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD18N55M5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD18N55M5 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STD18N55M5 is 100 kHz, but it can be operated at higher frequencies with reduced performance.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 55V. Additionally, the gate current (Ig) should be limited to 100 mA.
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The maximum power dissipation of the STD18N55M5 is 150 W, but this can be increased with proper heat sinking and thermal management.
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To protect the STD18N55M5 from overvoltage and overcurrent, use a voltage regulator to limit the voltage to 55V or less, and add a current limiter or fuse to prevent excessive current.
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Yes, the STD18N55M5 can be used in high-temperature applications up to 150°C, but the maximum power dissipation and performance may be reduced at higher temperatures.