| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK7M9R9-60EX | Nexperia | $0.5897 | Power Field-Effect Transistor, 60A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD60N55-1 vs BUK7M9R9-60EX |
| 934070045115 | Nexperia | Check for Price | Power Field-Effect Transistor, 60A I(D), 60V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD60N55-1 vs 934070045115 |
Part Details for STD60N55-1 by STMicroelectronics
Results Overview of STD60N55-1 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STD60N55-1 Information
STD60N55-1 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
STD60N55-1 Part Data Attributes
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STD60N55-1
STMicroelectronics
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Datasheet
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STD60N55-1
STMicroelectronics
Power Field-Effect Transistor, 65A I(D), 55V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-251AA | |
| Package Description | Rohs Compliant, To-251, Ipak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 390 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 25 Pf | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Packing Method | Tube | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD60N55-1
This table gives cross-reference parts and alternative options found for STD60N55-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD60N55-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.