Datasheets
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STD7NM80-1 by:
STMicroelectronics

Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Details for STD7NM80-1 by STMicroelectronics

Results Overview of STD7NM80-1 by STMicroelectronics

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Applications Industrial Automation Motor control systems

STD7NM80-1 Information

STD7NM80-1 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for STD7NM80-1

Part # Distributor Description Stock Price Buy
Bristol Electronics Trans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube 3167
RFQ
Chip Stock N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package 18500
RFQ
Vyrian Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 12363
RFQ

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STD7NM80-1 Part Data Attributes

STD7NM80-1 STMicroelectronics
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STD7NM80-1 STMicroelectronics Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Rohs Code Yes
Part Life Cycle Code Obsolete
Part Package Code TO-251
Pin Count 3
ECCN Code EAR99
Avalanche Energy Rating (Eas) 240 Mj
Case Connection Isolated
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 1.05 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style In-Line
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 26 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin
Terminal Form Through-Hole
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for STD7NM80-1

This table gives cross-reference parts and alternative options found for STD7NM80-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD7NM80-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STD7NM80 STMicroelectronics $1.2733 Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 STD7NM80-1 vs STD7NM80
STP7NM80 STMicroelectronics Check for Price Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB STD7NM80-1 vs STP7NM80
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STD7NM80-1 Related Parts

STD7NM80-1 Frequently Asked Questions (FAQ)

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