| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP7NK40Z | STMicroelectronics | $0.9931 | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STD86N3LH5 vs STP7NK40Z |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STD86N3LH5 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STD86N3LH5 vs IPB80N06S2LH5ATMA1 |
| FX3AS-06 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.54ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | STD86N3LH5 vs FX3AS-06 |
| IXFK100N25 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 100A I(D), 250V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264 | STD86N3LH5 vs IXFK100N25 |
| IXTH14N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STD86N3LH5 vs IXTH14N80 |
| APT50M75LFLL | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | STD86N3LH5 vs APT50M75LFLL |
| STH8NA80FI | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD86N3LH5 vs STH8NA80FI |
| IXFH26N60Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 26A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STD86N3LH5 vs IXFH26N60Q |
| FQB9N25C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STD86N3LH5 vs FQB9N25C |
Part Details for STD86N3LH5 by STMicroelectronics
Results Overview of STD86N3LH5 by STMicroelectronics
- Distributor Offerings: (24 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STD86N3LH5 Information
STD86N3LH5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD86N3LH5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
45AC7545
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Newark | Mosfet, Aec-Q101, N-Ch, 30V, To-252, |Stmicroelectronics STD86N3LH5 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 3475 |
|
$0.6950 / $1.7600 | Buy Now |
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DISTI #
497-8890-1-ND
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DigiKey | MOSFET N-CH 30V 80A DPAK Min Qty: 1 Container: Cut Tape |
6736 Cut Tape |
|
$0.6158 / $1.8400 | Buy Now |
|
DISTI #
497-8890-6-ND
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DigiKey | MOSFET N-CH 30V 80A DPAK Min Qty: 1 Container: Digi-Reel |
6736 Digi-Reel® |
|
$0.6158 / $1.8400 | Buy Now |
|
DISTI #
497-8890-2-ND
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DigiKey | MOSFET N-CH 30V 80A DPAK Min Qty: 2500 Container: Tape & Reel |
5000 Tape & Reel |
|
$0.4518 / $0.5053 | Buy Now |
|
DISTI #
92859867
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Verical | Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Date Code: 2516 | Americas - 17500 |
|
$0.4319 / $0.4430 | Buy Now |
|
DISTI #
93258931
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Verical | Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 3 Package Multiple: 1 | Americas - 1675 |
|
$0.4751 / $1.6284 | Buy Now |
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DISTI #
511-STD86N3LH5
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Mouser Electronics | MOSFETs N-channel 30 V RoHS: Compliant | 4454 |
|
$0.4920 / $1.8400 | Buy Now |
|
DISTI #
V36:1790_06559923
|
Arrow Electronics | Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R COO: China RoHS: Exempt Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Date Code: 2516 | Americas - 17500 |
|
$0.4319 / $0.4430 | Buy Now |
|
DISTI #
P02:6590_01786959
|
Arrow Electronics | Trans MOSFET N-CH 30V 80A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Container: Cut Strips | Asia - 1675 |
|
$0.4751 / $1.6284 | Buy Now |
|
|
STMicroelectronics | Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package COO: China Min Qty: 1 | 4454 |
|
$0.6200 / $1.8400 | Buy Now |
STD86N3LH5 CAD Models
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STD86N3LH5 Part Data Attributes
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STD86N3LH5
STMicroelectronics
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Datasheet
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STD86N3LH5
STMicroelectronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Dpak-3/2 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 165 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 58 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD86N3LH5
This table gives cross-reference parts and alternative options found for STD86N3LH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD86N3LH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STD86N3LH5 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
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Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
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Use X7R or X5R ceramic capacitors with a voltage rating of 10V or higher. A 10uF input capacitor and a 22uF output capacitor are recommended.
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Use a shielded enclosure, keep sensitive components away from the STD86N3LH5, and ensure good grounding and decoupling. Implement EMI filters and shielding on cables.
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The maximum allowed voltage drop is 0.5V. Ensure that the input voltage is within the recommended range to maintain device reliability.