Part Details for TC58NYG1S3HBAI6 by KIOXIA
Overview of TC58NYG1S3HBAI6 by KIOXIA
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TC58NYG1S3HBAI6
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TC58NYG1S3HBAI6-ND
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DigiKey | IC FLASH 2GBIT PARALLEL 67VFBGA Min Qty: 1 Lead time: 12 Weeks Container: Tray |
143 In Stock |
|
$2.7537 / $3.8100 | Buy Now |
DISTI #
757-TC58NYG1S3HBAI6
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Mouser Electronics | NAND Flash 1.8V 2Gb 24nm SLC NAND (EEPROM) RoHS: Compliant | 142 |
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$3.3600 / $3.7800 | Buy Now |
Part Details for TC58NYG1S3HBAI6
TC58NYG1S3HBAI6 CAD Models
TC58NYG1S3HBAI6 Part Data Attributes
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TC58NYG1S3HBAI6
KIOXIA
Buy Now
Datasheet
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Compare Parts:
TC58NYG1S3HBAI6
KIOXIA
Flash, 256MX8, PBGA67, VFBGA-67
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Part Life Cycle Code | Active | |
Ihs Manufacturer | KIOXIA HOLDINGS CORP | |
Package Description | VFBGA, | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.51 | |
Access Time-Max | 25 ns | |
JESD-30 Code | R-PBGA-B67 | |
Length | 8 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Terminals | 67 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 256MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA67,8X10,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Parallel/Serial | SERIAL | |
Programming Voltage | 1.8 V | |
Seated Height-Max | 1 mm | |
Standby Current-Max | 0.00005 A | |
Supply Current-Max | 0.03 mA | |
Supply Voltage-Max (Vsup) | 1.95 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Type | NAND TYPE | |
Width | 6.5 mm | |
Write Cycle Time-Max (tWC) | 0.000025 ms | |
Write Protection | HARDWARE |