Part Details for TN2106N3-G by Microchip Technology Inc
Overview of TN2106N3-G by Microchip Technology Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for TN2106N3-G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
53Y4243
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Newark | Mosfet, N-Ch, 100V, 1.2A, To-92, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:0.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Microchip TN2106N3-G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1680 |
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$0.2120 | Buy Now |
DISTI #
TN2106N3-G-ND
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DigiKey | MOSFET N-CH 60V 300MA TO92-3 Min Qty: 1 Lead time: 7 Weeks Container: Bag |
1326 In Stock |
|
$0.5200 / $0.6800 | Buy Now |
DISTI #
TN2106N3-G
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Avnet Americas | Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Bag - Bag (Alt: TN2106N3-G) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 7 Weeks, 0 Days Container: Bag | 0 |
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$0.5200 / $0.6800 | Buy Now |
DISTI #
53Y4243
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Avnet Americas | Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Bag - Bulk (Alt: 53Y4243) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 1680 Partner Stock |
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$0.5410 / $0.7070 | Buy Now |
DISTI #
689-TN2106N3-G
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Mouser Electronics | MOSFET 60V 2.5Ohm RoHS: Compliant | 1162 |
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$0.5200 / $0.6800 | Buy Now |
DISTI #
V36:1790_06515658
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Arrow Electronics | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks Date Code: 1739 | Americas - 336 |
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$0.2917 | Buy Now |
DISTI #
V99:2348_06515658
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Arrow Electronics | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag Min Qty: 1 Package Multiple: 1 Lead time: 7 Weeks Date Code: 2110 | Americas - 258 |
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$0.4123 / $0.4797 | Buy Now |
DISTI #
TN2106N3-G
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes |
15786 Alternates Available |
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$0.3800 / $0.6800 | Buy Now |
DISTI #
70452245
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RS | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 2.5 Ohm3 TO-92 BAG | Microchip Technology Inc. TN2106N3-G RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Bulk | 0 |
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$0.5800 / $0.6800 | RFQ |
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Future Electronics | . RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Bag | 0Bag |
|
$0.5100 / $0.5600 | Buy Now |
Part Details for TN2106N3-G
TN2106N3-G CAD Models
TN2106N3-G Part Data Attributes
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TN2106N3-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
TN2106N3-G
Microchip Technology Inc
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 17 Weeks, 4 Days | |
Samacsys Manufacturer | Microchip | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 8 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.74 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for TN2106N3-G
This table gives cross-reference parts and alternative options found for TN2106N3-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TN2106N3-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2337DS-T1-E3 | Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | TN2106N3-G vs SI2337DS-T1-E3 |
MMBF170-7-F | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | TN2106N3-G vs MMBF170-7-F |
TN5325N3-G | 215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Microchip Technology Inc | TN2106N3-G vs TN5325N3-G |
ZVN4106FTA | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | TN2106N3-G vs ZVN4106FTA |
RUR040N02TL | Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN | ROHM Semiconductor | TN2106N3-G vs RUR040N02TL |
VN2110K1-G | 200mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | TN2106N3-G vs VN2110K1-G |
SI2306BDS-T1-E3 | Power Field-Effect Transistor, | Vishay Intertechnologies | TN2106N3-G vs SI2306BDS-T1-E3 |
VP2110K1-G | 120mA, 100V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Microchip Technology Inc | TN2106N3-G vs VP2110K1-G |
ZVP3306FTA | Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | TN2106N3-G vs ZVP3306FTA |
RHP020N06T100 | Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN | ROHM Semiconductor | TN2106N3-G vs RHP020N06T100 |