Transistors
VQ1000J
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Overview of VQ1000J by Vishay Siliconix

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Price & Stock for VQ1000J by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
NexGen Digital   27
RFQ

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Part Data Attributes for VQ1000J by Vishay Siliconix

VQ1000J
Vishay Siliconix
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
SILICONIX INC
Part Package Code
DIP
Package Description
,
Pin Count
14
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Drain Current-Max (ID)
0.225 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
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  1. VQ1000J
    Vishay Siliconix
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Alternate Parts for VQ1000J

This table gives cross-reference parts and alternative options found for VQ1000J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1000J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies VQ1000J vs VQ1000P
Part Number Description Manufacturer Compare
ZVN4206E Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1000J vs ZVN4206E
VQ1001P Power Field-Effect Transistor, 0.85A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 Supertex Inc VQ1000J vs VQ1001P
VQ1000N7 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, DIP-14 Supertex Inc VQ1000J vs VQ1000N7
VQ1000CP Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-4 Calogic Inc VQ1000J vs VQ1000CP
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1004J
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1000P
VN3205P-G Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001, GREEN, MS-001AA, 14 PIN Supertex Inc VQ1000J vs VN3205P-G
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Supertex Inc VQ1000J vs VQ1004P
ZVN3306E Power Field-Effect Transistor, 0.27A I(D), 60V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1000J vs ZVN3306E
ZVN2106E 0.45A, 60V, 2ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1000J vs ZVN2106E

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