Datasheets
W972GG8JB-25 by: Winbond Electronics Corp

DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, WBGA-60

Part Details for W972GG8JB-25 by Winbond Electronics Corp

Overview of W972GG8JB-25 by Winbond Electronics Corp

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Price & Stock for W972GG8JB-25

Part # Distributor Description Stock Price Buy
Bristol Electronics   16
RFQ
Velocity Electronics Our Stock 378
RFQ

Part Details for W972GG8JB-25

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W972GG8JB-25 Part Data Attributes

W972GG8JB-25 Winbond Electronics Corp
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W972GG8JB-25 Winbond Electronics Corp DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, WBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 11.5 mm
Memory Density 2147483648 bit
Memory IC Type DDR2 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.012 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 11 mm

Alternate Parts for W972GG8JB-25

This table gives cross-reference parts and alternative options found for W972GG8JB-25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W972GG8JB-25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT47H256M8EB-25EAIT:C DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25EAIT:C
MT47H256M8EB-25EIT:C DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25EIT:C
MT47H256M8EB-25E:A DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 12.5 M, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25E:A
MT47H256M8EB-25EAAT:C DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25EAAT:C
MT47H256M8EB-25E:C DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25E:C
Part Number Description Manufacturer Compare
MT47H256M8EB-187EIT:C DDR DRAM, 256MX8, 0.35ns, CMOS, PBGA60, 9 X 11.50 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-187EIT:C
MT47H256M8EB-3:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 9 X 12.5 M, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-3:A
MT47H256M8HG-3LIT:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8HG-3LIT:A
H5PS2G43EMR-Y5 DDR DRAM, 512MX4, 0.45ns, CMOS, PBGA63, ROHS COMPLIANT, FPBGA-63 SK Hynix Inc W972GG8JB-25 vs H5PS2G43EMR-Y5
MT47H256M8HG-3EL:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8HG-3EL:A
MT47H256M8HG-3EIT:A DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, 11.50 X 14 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8HG-3EIT:A
H5PS2G83MFP-Y5 DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc W972GG8JB-25 vs H5PS2G83MFP-Y5
MT47H512M4-25:G DDR DRAM, 256MX4, CMOS, PBGA63, 9 X 11.50 MM, LEAD FREE, FBGA-63 Micron Technology Inc W972GG8JB-25 vs MT47H512M4-25:G
MT47H256M8EB-25E:A DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA60, 9 X 12.5 M, ROHS COMPLIANT, FBGA-60 Micron Technology Inc W972GG8JB-25 vs MT47H256M8EB-25E:A
HYB18T2G402C2F-25F DDR DRAM, 512MX4, 0.6ns, CMOS, PBGA63, GREEN, PLASTIC, TFBGA-63 Qimonda AG W972GG8JB-25 vs HYB18T2G402C2F-25F

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