Datasheets
W9825G6EH-6 by: Winbond Electronics Corp

DDR DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54

Part Details for W9825G6EH-6 by Winbond Electronics Corp

Overview of W9825G6EH-6 by Winbond Electronics Corp

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for W9825G6EH-6

Part # Distributor Description Stock Price Buy
Bristol Electronics   23
RFQ

Part Details for W9825G6EH-6

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W9825G6EH-6 Part Data Attributes:

W9825G6EH-6 Winbond Electronics Corp
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W9825G6EH-6 Winbond Electronics Corp DDR DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Samacsys Manufacturer Winbond
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for W9825G6EH-6

This table gives cross-reference parts and alternative options found for W9825G6EH-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9825G6EH-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
EDS2516APTA-60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Elpida Memory Inc W9825G6EH-6 vs EDS2516APTA-60
K4S561632J-UC60T Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor W9825G6EH-6 vs K4S561632J-UC60T
W9825G6DH-6 DDR DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp W9825G6EH-6 vs W9825G6DH-6
K4S561632J-UC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor W9825G6EH-6 vs K4S561632J-UC600
Part Number Description Manufacturer Compare
K4S561632J-UC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor W9825G6EH-6 vs K4S561632J-UC600
HYB39S256160DEL-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG W9825G6EH-6 vs HYB39S256160DEL-6
W9825G6JH-6I Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp W9825G6EH-6 vs W9825G6JH-6I
K4S561632H-TC600 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor W9825G6EH-6 vs K4S561632H-TC600
K4S561632C-TI60 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor W9825G6EH-6 vs K4S561632C-TI60
W9825G6DH-6 DDR DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp W9825G6EH-6 vs W9825G6DH-6
HYB39S256160DF-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PBGA54, 12 X 8 MM, PLASTIC, TFBGA-54 Infineon Technologies AG W9825G6EH-6 vs HYB39S256160DF-6
W9825G6JH-6A Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 PITCH, ROHS COMPLIANT, TSOP2-54 Winbond Electronics Corp W9825G6EH-6 vs W9825G6JH-6A
IS42S16160A-6TL Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc W9825G6EH-6 vs IS42S16160A-6TL
HYB39S256160DT-6 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Infineon Technologies AG W9825G6EH-6 vs HYB39S256160DT-6

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