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V59C1512404QAUP25AE
ProMOS Technologies Inc
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 4 | 128MX4 | 1.8 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | AUTOMOTIVE | R-XBGA-B68 | 125 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 68 | UNSPECIFIED | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 17 mm | 9 mm | PROMOS TECHNOLOGIES INC | BGA | TFBGA, | 68 | compliant | EAR99 | 8542.32.00.28 | |||||||||||||||||
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MT48LC16M8A2FB-7E
Micron Technology Inc
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Check for Price | No | Obsolete | 134.2177 Mbit | 8 | 16MX8 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 330 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e0 | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,8X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 800 µm | BOTTOM | 1.2 mm | 16 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | 8 X 16 MM, PLASTIC, FBGA-60 | 60 | not_compliant | EAR99 | 8542.32.00.02 | ||||||||
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EBE11UE6ACUA-8E-E
Elpida Memory Inc
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Check for Price | Yes | Obsolete | 8.5899 Gbit | 64 | 128MX64 | 1.8 V | 400 ps | 400 MHz | 8192 | DUAL BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | COMMON | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 80 mA | 1.76 mA | 1.9 V | 1.7 V | CMOS | OTHER | R-XZMA-N200 | Not Qualified | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 200 | UNSPECIFIED | DIMM | DIMM200,24 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 600 µm | ZIG-ZAG | ELPIDA MEMORY INC | SODIMM | DIMM, DIMM200,24 | 200 | unknown | EAR99 | 8542.32.00.36 | |||||||||||||
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THMD51E30B70
Toshiba America Electronic Components
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Check for Price | Obsolete | 4.8318 Gbit | 72 | 64MX72 | 2.5 V | 750 ps | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-XDMA-N184 | Not Qualified | 70 °C | 184 | UNSPECIFIED | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | TOSHIBA CORP | , | unknown | |||||||||||||||||||||||||||||
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W3J128M64K-1600PBI
Mercury Systems Inc
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Check for Price | Active | 8.5899 Gbit | 64 | 128MX64 | 1.35 V | SINGLE BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | 8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | NO | YES | 8 | CMOS | INDUSTRIAL | R-PBGA-B375 | 85 °C | -40 °C | 375 | PLASTIC/EPOXY | BGA | BGA375(UNSPEC) | RECTANGULAR | GRID ARRAY | YES | BALL | BOTTOM | MERCURY SYSTEMS INC | BGA, BGA375(UNSPEC) | unknown | EAR99 | 8542.32.00.36 | |||||||||||||||||||||||||
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K4H560838F-ULB00
Samsung Semiconductor
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Check for Price | Yes | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 3 mA | 250 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | 2 | 70 °C | 66 | PLASTIC/EPOXY | TSOP2 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 650 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSSOP66,.46 | 66 | compliant | EAR99 | 8542.32.00.24 | ||||||||
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DPSD96MX8WKY5-DP-XXP12
B&B Electronics Manufacturing Company
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Check for Price | Transferred | 805.3064 Mbit | 8 | 96MX8 | 3.3 V | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 96000000 | 100.6633 M | SYNCHRONOUS | YES | CMOS | R-PDSO-G54 | Not Qualified | 54 | PLASTIC/EPOXY | ATSOP | RECTANGULAR | SMALL OUTLINE, PIGGYBACK, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 3.81 mm | 22.48 mm | DPAC TECHNOLOGIES CORP | TSOP | ATSOP, | 54 | unknown | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||||||
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W3J512M32G-1066B2I
Microsemi Corporation
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Check for Price | Active | 17.1799 Gbit | 32 | 512MX32 | 1.5 V | SINGLE BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | 1.575 V | 1.425 V | CMOS | INDUSTRIAL | R-PBGA-B204 | 85 °C | -40 °C | 204 | PLASTIC/EPOXY | FBGA | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 3.84 mm | 14.6 mm | 10.1 mm | MICROSEMI CORP | FBGA, | compliant | ||||||||||||||||||||||||||
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W1D64M72R8B-3.75AR-HB1
AMD Xilinx
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Check for Price | Active | 536.8709 Mbit | 8 | 64MX8 | 1.8 V | 500 ps | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 1.9 V | 1.7 V | COMMERCIAL | R-XDMA-N240 | Not Qualified | e4 | 55 °C | 240 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | GOLD | NO LEAD | 1.27 mm | DUAL | 2.7 mm | 133.35 mm | 25.4 mm | XILINX INC | DIMM | DIMM, | 240 | unknown | ||||||||||||||||||||||
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V54C3128404VCUK6H
ProMOS Technologies Inc
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Check for Price | Active | 134.2177 Mbit | 4 | 32MX4 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | Not Qualified | 105 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | PROMOS TECHNOLOGIES INC | DSBGA | GREEN, MO-207, FBGA-54 | 54 | compliant | EAR99 | 8542.32.00.02 |