Parametric results for: Small Signal Field-Effect Transistors

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2N7002K-AU_R1_000A2
PanJit Semiconductor
$0.0319 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 3 Ω ULTRA LOW RESISTANCE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 2018-10-01 PANJIT
BSS123-7-F
Diodes Incorporated
$0.0751 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 6 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 SOT-23, 3 PIN 3
2N7002KQ-13
Diodes Incorporated
$0.0413 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 2 Ω HIGH RELIABILITY 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 540 mW SWITCHING SILICON R-PDSO-G3 e3 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 GREEN, PLASTIC PACKAGE-3 3
BSS84DWQ-7
Diodes Incorporated
$0.1183 Yes Yes Active P-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 50 V 2 130 mA 10 Ω HIGH RELIABILITY 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G6 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99
2N7000-G
Microchip Technology Inc
$0.3571 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω HIGH INPUT IMPEDANCE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM MICROCHIP TECHNOLOGY INC compliant EAR99 Microchip 8542.39.00.01
J111-D26Z
onsemi
$0.2032 Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI compliant EAR99 onsemi 135AR
J111
onsemi
$0.1426 Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 350 mW CHOPPER SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM ONSEMI compliant EAR99 onsemi TO-226AA, 3 PIN 3 135AN TO-92
2N7002W
onsemi
$0.1413 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI compliant EAR99 onsemi 419AB
2N7002DW
onsemi
$0.1839 Yes Active N-CHANNEL YES SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6 60 V 2 115 mA 7.5 Ω 7 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON R-PDSO-G6 e3 Not Qualified 1 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI compliant EAR99 onsemi SC70, 6 PIN 419B-02
BSS84-7-F
Diodes Incorporated
$0.0646 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω HIGH RELIABILITY, LOW THRESHOLD 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 3