Parametric results for: 1N3026B-1 under Zener Diodes
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1N3026B-1
Microsemi Corporation
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$7.2261 | No | No | Transferred | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 20 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-41 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-41 | HERMETIC SEALED, GLASS PACKAGE-1 | 1 | unknown | EAR99 | 8541.10.00.50 | ||||||
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JAN1N3026B-1
Microchip Technology Inc
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$7.8802 | No | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-41, 2 PIN | compliant | ||||||||||||
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1N3026B-1
Microchip Technology Inc
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$8.4387 | No | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 20 Ω | 5 % | Not Qualified | O-LALF-W2 | e0 | DO-41 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-1 | compliant | |||||||||||
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JANTX1N3026B-1
Microchip Technology Inc
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$10.3861 | No | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-41, 2 PIN | compliant | ||||||||||||
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JANTX1N3026B-1/TR
Microchip Technology Inc
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$10.4548 | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.50 | ||||||||||||
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JANTXV1N3026B-1
Microchip Technology Inc
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$12.2558 | No | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Qualified | O-XALF-W2 | e0 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | DO-41, 2 PIN | compliant | ||||||||||||
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JANTXV1N3026B-1
Microsemi Corporation
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$14.1738 | No | Transferred | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | e0 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | DO-41, 2 PIN | unknown | ||||||||||||
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1N3026B-1E3
Microsemi Corporation
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Check for Price | Yes | Transferred | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 20 Ω | 5 % | O-LALF-W2 | DO-41 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | PURE MATTE TIN | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.50 | |||||||||||
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JANTX1N3026B-1
Compensated Devices Inc
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Check for Price | Transferred | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | METALLURGICALLY BONDED | 5 % | Not Qualified | O-XALF-W2 | MIL-19500/115K | DO-41 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | DO-41, 2 PIN | unknown | |||||||||||||||
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JANTX1N3026B-1
VPT Components
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Check for Price | No | Active | 14 mA | 1 W | 18 V | SILICON | ZENER DIODE | UNIDIRECTIONAL | SINGLE | NO | 1 | ZENER | 5 % | Qualified | O-LALF-W2 | MIL-19500 | DO-204AL | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | VPT COMPONENTS | DO-41, 2 PIN | compliant | EAR99 | 8541.10.00.50 | 2019-09-27 |