Parametric results for: 1N3595 under Rectifier Diodes
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1N3595TR
Fairchild Semiconductor Corporation
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$0.0295 | Yes | Yes | Transferred | 200 mA | 1 V | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | 500 mA | 1 | Not Qualified | O-XALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | FAIRCHILD SEMICONDUCTOR CORP | DO-35 | DO-35, 2 PIN | 2 | AXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH | compliant | EAR99 | 8541.10.00.70 | |||||||
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1N3595
onsemi
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$0.0503 | Yes | Active | 200 mA | 1 V | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | 500 mA | 1 | Not Qualified | O-XALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | ONSEMI | DO-35, 2 PIN | 017AG | compliant | EAR99 | 8541.10.00.70 | onsemi | |||||||||
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1N3595TR
onsemi
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$0.0722 | Yes | Active | 200 mA | 1 V | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | 500 mA | 1 | Not Qualified | O-XALF-W2 | e3 | DO-35 | 175 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | ONSEMI | DO-35, 2 PIN | 017AG | compliant | EAR99 | 8541.10.00.70 | onsemi | |||||||||
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1N3595-1
Microsemi Corporation
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$1.6538 | No | Transferred | 200 mA | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | unknown | Microsemi Corporation | |||||||||||||
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JAN1N3595A-1
Microchip Technology Inc
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$2.3653 | No | Active | 150 mA | 700 mV | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/241 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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JAN1N3595-1
Microchip Technology Inc
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$2.3903 | No | Active | 150 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/241H | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | |||||||||||||||||
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1N3595-1E3
Microsemi Corporation
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$2.4281 | Yes | Transferred | 200 mA | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | METALLURGICALLY BONDED | O-LALF-W2 | MIL-19500 | DO-35 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||||||
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1N3595-1
Microchip Technology Inc
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$3.0267 | No | Active | 200 mA | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500 | DO-35 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | Microchip | |||||||||||||
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JAN1N3595-1
Microsemi Corporation
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$3.0525 | No | Transferred | 150 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/241H | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | DO-35 | SIMILAR TO DO-35, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation | ||||||||||||
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JAN1N3595A-1
Microsemi Corporation
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$3.0525 | No | Transferred | 150 mA | 700 mV | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/241 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | DO-35 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | compliant | EAR99 | 8541.10.00.70 | Microsemi Corporation |