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JAN1N5617
Microchip Technology Inc
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$4.4620 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | compliant | |||||||||||||||||||
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1N5617
Microchip Technology Inc
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$4.6195 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY, METALLURGICALLY BONDED | 1 | Not Qualified | O-LALF-W2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, A, 2 PIN | compliant | |||||||||||||||||
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1N5617E3/TR
Microchip Technology Inc
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$5.0026 | Active | RECTIFIER DIODE | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||
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JANTX1N5617
Microchip Technology Inc
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$5.1011 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | GENERAL PURPOSE | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/429J | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | compliant | |||||||||||||||||||
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JANTX1N5617/TR
Microchip Technology Inc
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$5.2716 | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 400 V | O-LALF-W2 | MIL-PRF-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||
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1N5617C.TR
Semtech Corporation
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$5.7000 | Transferred | 1 A | 1.6 V | 150 ns | 1 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 400 V | 1 | AVALANCHE | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 400 V | E-XALF-W2 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ELLIPTICAL | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||
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1N5617US
Sensitron Semiconductors
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$6.6523 | No | No | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | HIGH RELIABILITY | FAST RECOVERY | 25 A | 1 | 400 V | Not Qualified | E-LELF-R2 | e0 | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ELLIPTICAL | LONG FORM | TIN LEAD | WRAP AROUND | END | SENSITRON SEMICONDUCTOR | MELF-1, 2 PIN | compliant | EAR99 | 8541.10.00.80 | 2 | 1994-01-01 | |||||||
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1N5617US
Microchip Technology Inc
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$6.6620 | No | Active | 1 A | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | AVALANCHE | HIGH RELIABILITY | GENERAL PURPOSE | 1 | Not Qualified | O-LELF-R2 | e0 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, D-5A, 2 PIN | compliant | |||||||||||||||||
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1N5617US/TR
Microchip Technology Inc
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$6.8567 | Active | 1 A | 1.6 V | 150 ns | 500 nA | SILICON | 440 V | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | FAST RECOVERY | 25 A | 1 | 400 V | O-LELF-R2 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||
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JAN1N5617US
Microchip Technology Inc
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$7.9177 | No | Active | 1 A | 1.6 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 400 V | 1 | GENERAL PURPOSE | 1 | Qualified | O-LELF-R2 | MIL-19500/429J | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant |