Parametric results for: 1N6160AUS under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Reverse Current-Max Surface Mount Technology

HIGH RELIABILITY 3 TRAY 4

33 hits Apply

Breakdown Voltage-Min (1)

53.2 V 21

33 hits Apply

Breakdown Voltage-Nom (1)

53.2 V 1

33 hits Apply

ISOLATED 31

33 hits Apply

Clamping Voltage-Max (1)

77 V 11

33 hits Apply

Configuration (1)

SINGLE 33

33 hits Apply

Diode Element Material (1)

SILICON 33

33 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 33

33 hits Apply

O-LELF-R2 25 O-XELF-N2 7

33 hits Apply

e0 16 e3 1

33 hits Apply

Manufacturer (7)

Defense Logistics Agency 4 Microchip Technology Inc 6 Microsemi Corporation 7 Micross Components 5 New Jersey Semiconductor Products Inc 1 Semtech Corporation 6 Sensitron Semiconductors 4

33 hits Apply

Number of Elements (1)

1 33

33 hits Apply

Polarity (2)

BIDIRECTIONAL 11 UNIDIRECTIONAL 22

33 hits Apply

Power Dissipation-Max (2)

3 W 8 7.5 W 12

Min (W) - Max (W)

33 hits Apply

Rep Pk Reverse Voltage-Max (1)

42.6 V 29

33 hits Apply

Reverse Current-Max (1)

5 µA 5

33 hits Apply

Surface Mount (1)

YES 32

33 hits Apply

Technology (2)

AVALANCHE 26 ZENER 7

33 hits Apply