Parametric results for: 1N6464US under Transient Suppressors

All Filters Additional Feature Breakdown Voltage-Min Breakdown Voltage-Nom Case Connection Clamping Voltage-Max Configuration Diode Element Material Diode Type JESD-30 Code JESD-609 Code Manufacturer Number of Elements Polarity Power Dissipation-Max Rep Pk Reverse Voltage-Max Surface Mount Technology

HIGH RELIABILITY 6 HIGH RELIABILITY, METALLURGICALLY BODED 3 METALLURGICALLY BODED 6

34 hits Apply

Breakdown Voltage-Min (1)

16.4 V 16

34 hits Apply

Breakdown Voltage-Nom (1)

16.4 V 1

34 hits Apply

ISOLATED 30

34 hits Apply

Clamping Voltage-Max (1)

26.5 V 15

34 hits Apply

Configuration (1)

SINGLE 32

34 hits Apply

Diode Element Material (1)

SILICON 33

34 hits Apply

Diode Type (1)

TRANS VOLTAGE SUPPRESSOR DIODE 33

34 hits Apply

O-LELF-N2 2 O-LELF-R2 8 O-MELF-R2 6 O-XELF-R2 16

34 hits Apply

e0 18

34 hits Apply

Manufacturer (7)

Bkc Semiconductors Inc 5 Defense Logistics Agency 3 Microchip Technology Inc 5 Microsemi Corporation 8 Micross Components 6 Semtech Corporation 6 Sensitron Semiconductors 1

34 hits Apply

Number of Elements (1)

1 32

34 hits Apply

Polarity (1)

UNIDIRECTIONAL 33

34 hits Apply

Power Dissipation-Max (3)

2.5 W 19 3 W 6 5 W 6

Min (W) - Max (W)

34 hits Apply

Rep Pk Reverse Voltage-Max (1)

15 V 32

34 hits Apply

Surface Mount (1)

YES 33

34 hits Apply

Technology (1)

AVALANCHE 33

34 hits Apply