Parametric results for: 2N7000-G. under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 2

15 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 10

15 hits Apply

DS Breakdown Voltage-Min (1)

60 V 12

15 hits Apply

Drain Current-Max (ID) (1)

200 mA 12

15 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 12

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

15 hits Apply

5 pF 12

15 hits Apply

TO-92 12

15 hits Apply

O-PBCY-T3 11 O-PBCY-W3 1

15 hits Apply

e1 1 e3 2 e4 2

15 hits Apply

Manufacturer (8)

Comchip Technology Corporation Ltd 1 Microchip Technology Inc 6 onsemi 1 Rochester Electronics LLC 1 Supertex Inc 1 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1 Unisonic Technologies Co Ltd 3

15 hits Apply

Number of Elements (1)

1 12

15 hits Apply

Number of Terminals (1)

3 12

15 hits Apply

ENHANCEMENT MODE 12

15 hits Apply

150.0 °C 10

15 hits Apply

-55.0 °C 7

15 hits Apply

PLASTIC/EPOXY 12

15 hits Apply

ROUND 12

15 hits Apply

CYLINDRICAL 12

15 hits Apply

Active 12 Contact Manufacturer 1 Obsolete 1 Transferred 1

15 hits Apply

Yes 3

15 hits Apply

260 1 NOT SPECIFIED 2

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

15 hits Apply

625 mW 1

15 hits Apply

350 mW 1 625 mW 1 1 W 1

Min (W) - Max (W)

15 hits Apply

Surface Mount (1)

NO 12

15 hits Apply