Parametric results for: 2SC3583-R under RF Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 16

20 hits Apply

Collector Current-Max (IC) (1)

65 mA 20

20 hits Apply

0.9 pF 20

20 hits Apply

Collector-Emitter Voltage-Max (1)

10 V 20

20 hits Apply

Configuration (1)

SINGLE 20

20 hits Apply

DC Current Gain-Min (hFE) (3)

50.0 1 80.0 2 125.0 1

Min - Max

20 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 20

20 hits Apply

R-PDSO-G3 20

20 hits Apply

e0 4 e6 4

20 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 8 NEC Electronics Group 8 Renesas Electronics Corporation 4

20 hits Apply

1 4

20 hits Apply

Number of Elements (1)

1 20

20 hits Apply

Number of Terminals (1)

3 20

20 hits Apply

150.0 °C 4

20 hits Apply

PLASTIC/EPOXY 20

20 hits Apply

RECTANGULAR 20

20 hits Apply

SMALL OUTLINE 20

20 hits Apply

Obsolete 12 Transferred 8

20 hits Apply

Yes 4

20 hits Apply

Polarity/Channel Type (1)

NPN 20

20 hits Apply

200 mW 4

20 hits Apply

200 mW 4

20 hits Apply

Surface Mount (1)

YES 20

20 hits Apply

Transition Frequency-Nom (fT) (1)

9 GHz 20

20 hits Apply