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Manufacturer Part Number: 6116la55db
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IDT6116LA55DB
 Integrated Device Technology Inc 		Check for Price No Transferred 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 1 1 2000 2.048 k ASYNCHRONOUS 3-STATE YES PARALLEL 200 µA 2 V 90 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T24 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.826 mm 32.004 mm 15.24 mm DIP 0.600 INCH, CERAMIC, DIP-24 24 3A001.A.2.C 8542.32.00.41 1986-09-17
IDT6116LA55DB
 Renesas Electronics Corporation 		Check for Price Obsolete 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 1 1 2000 2.048 k ASYNCHRONOUS 3-STATE YES PARALLEL 200 µA 2 V 90 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T24 Not Qualified e0 125 °C -55 °C MIL-STD-883 Class B 24 CERAMIC, GLASS-SEALED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.826 mm 32.004 mm 15.24 mm 0.600 INCH, CERAMIC, DIP-24 3A001.A.2.C 8542.32.00.41
package
6116LA55DB
 Integrated Device Technology Inc 		Check for Price No Transferred 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 300 µA 2 V 90 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T24 Not Qualified e0 125 °C -55 °C 240 MIL-STD-883 Class B 24 CERAMIC, METAL-SEALED COFIRED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.826 mm 32.004 mm 15.24 mm CDIP DIP-24 24 3A001.A.2.C 8542.32.00.41 1986-09-17 CD24
6116LA55DB
 Renesas Electronics Corporation 		Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 1 1 2000 2.048 k ASYNCHRONOUS 3-STATE YES PARALLEL 20 mA 2 V 90 µA 5.5 V 4.5 V CMOS R-CDIP-T24 e0 1 125 °C -55 °C 240 MIL-STD-883 Class B 24 CERAMIC, METAL-SEALED COFIRED DIP DIP24,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn63Pb37) THROUGH-HOLE 2.54 mm DUAL 2.9 mm 32 mm 15.24 mm CDIP DIP-24 24 3A001.A.2.C 8542.32.00.41 2020-07-21 CD24
6116LA55DBRT
 Integrated Device Technology Inc 		Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 200 µA 2 V 90 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T24 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, METAL-SEALED COFIRED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 30.607 mm 7.62 mm DIP-24 3A001.a.2.c 8542.32.00.41
IDT6116LA55DBRT
 Integrated Device Technology Inc 		Check for Price No Obsolete 16.384 kbit 8 2KX8 5 V 55 ns STANDARD SRAM COMMON 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 200 µA 2 V 90 µA CMOS MILITARY R-CDIP-T24 Not Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 24 CERAMIC, METAL-SEALED COFIRED DIP DIP24,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 30.607 mm 7.62 mm DIP-24 3A001.a.2.c 8542.32.00.41