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71V67603S150PFGI8
Integrated Device Technology Inc
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$19.2893 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | 150 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | |||
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71V67603S150PFGI
Integrated Device Technology Inc
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$21.2897 | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | 150 MHz | STANDARD SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | TQFP | 14 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, MO-136BX, TQFP-100 | 100 | PKG100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1997-09-16 | |||
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IDT71V67603S150PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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IDT71V67603S150PFGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||||
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71V67603S150PFGI
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | 150 MHz | STANDARD SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | RENESAS ELECTRONICS CORP | TQFP | 100 | PKG100 | compliant | NLR | 8542320041 | Renesas Electronics | ||||
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71V67603S150PFGI8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | End Of Life | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | 150 MHz | STANDARD SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 70 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | RENESAS ELECTRONICS CORP | TQFP | 100 | PKG100 | compliant | NLR | 8542320041 | Renesas Electronics |