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72V01L15JG
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 25 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-N32 | e3 | 1 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 2.79 mm | 13.97 mm | 11.43 mm | RENESAS ELECTRONICS CORP | PLCC | 32 | PLG32 | compliant | NLR | 8542320071 | Renesas Electronics | |||||||
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72V01L15JG8
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Active | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 25 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-N32 | e3 | 1 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 2.79 mm | 13.97 mm | 11.43 mm | RENESAS ELECTRONICS CORP | PLCC | 32 | PLG32 | compliant | NLR | 8542320071 | Renesas Electronics | |||||||
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IDT72V01L15JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | RETRANSMIT | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | 32 | compliant | EAR99 | 8542.32.00.71 | QCCJ, LDCC32,.5X.6 | 1988-01-01 | |||||
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72V01L15JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 25 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-N32 | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 2.79 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | 32 | PLG32 | compliant | EAR99 | 8542.32.00.71 | LCC-32 | 1988-01-01 | ||||||
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IDT72V01L15JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 40 MHz | 25 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-J32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | 32 | compliant | EAR99 | 8542.32.00.71 | QCCJ, LDCC32,.5X.6 | 1988-01-01 | ||||||
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72V01L15JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.608 kbit | 9 | 512X9 | 3.3 V | 15 ns | 25 ns | OTHER FIFO | 1 | 512 | 512 words | ASYNCHRONOUS | 3-STATE | NO | PARALLEL | 5 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PQCC-N32 | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 2.79 mm | 13.97 mm | 11.43 mm | INTEGRATED DEVICE TECHNOLOGY INC | PLCC | 32 | PLG32 | compliant | EAR99 | 8542.32.00.71 | LCC-32 | 1988-01-01 |