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BAS32L,135
Nexperia
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$0.0396 | Yes | Active | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 1 | O-LELF-R2 | e3 | IEC-60134 | 1 | 200 °C | -65 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NEXPERIA | MELF | 2 | SOD80C | compliant | EAR99 | 8541.10.00.70 | 1991-04-01 | Nexperia | ||||||||
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BAS32L,115
Nexperia
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$0.0455 | Yes | Active | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 1 | O-LELF-R2 | e3 | IEC-60134 | 1 | 200 °C | -65 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NEXPERIA | MELF | 2 | SOD80C | compliant | EAR99 | 8541.10.00.70 | 1991-04-01 | Nexperia | ||||||||
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BAS32L
Bkc Semiconductors Inc
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Check for Price | No | Transferred | 200 mA | 750 mV | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 2 A | 1 | Not Qualified | O-LELF-R2 | e0 | DO-213AA | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | BKC SEMICONDUCTORS INC | unknown | ||||||||||||||||
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BAS32LT/R
NXP Semiconductors
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Check for Price | Yes | Transferred | 200 mA | 1 V | 4 ns | 5 µA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 2 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 200 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NXP SEMICONDUCTORS | 2 | compliant | EAR99 | 8541.10.00.70 | O-LELF-R2 | |||||||||
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BAS32LTRL13
YAGEO Corporation
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Check for Price | Obsolete | 200 mA | 1 V | 4 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | 1 | Not Qualified | O-LELF-R2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | PHILIPS COMPONENTS | unknown | EAR99 | 8541.10.00.70 | O-LELF-R2 | |||||||||||||||||||||
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BAS32LT/R
Nexperia
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Check for Price | Yes | Active | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 1 | O-LELF-R2 | e3 | IEC-60134 | 1 | 200 °C | -65 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NEXPERIA | compliant | EAR99 | 8541.10.00.70 | 2017-02-01 | O-LELF-R2 | |||||||||||
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BAS32L/T3
NXP Semiconductors
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Check for Price | Yes | Transferred | 200 mA | 1 V | 4 ns | 5 µA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 2 A | 1 | Not Qualified | O-LELF-R2 | e3 | 200 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NXP SEMICONDUCTORS | 2 | unknown | EAR99 | 8541.10.00.70 | O-LELF-R2 | ||||||||||||
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BAS32L,115
NXP Semiconductors
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Check for Price | Yes | Transferred | 200 mA | 1 V | 4 ns | 5 µA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | 2 A | 1 | Not Qualified | O-LELF-R2 | e3 | 1 | 200 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NXP SEMICONDUCTORS | MELF | 2 | SOD80C | compliant | EAR99 | 8541.10.00.70 | NXP | HERMETIC SEALED, GLASS PACKAGE-2 | ||||||
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BAS32L/S
NXP Semiconductors
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Check for Price | Obsolete | 200 mA | 4 ns | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | Not Qualified | O-LELF-R2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | NXP SEMICONDUCTORS | unknown | EAR99 | 8541.10.00.70 | O-LELF-R2 | |||||||||||||||||||||
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BAS32L
North American Philips Discrete Products Div
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Check for Price | No | Transferred | 200 mA | 750 mV | 4 ns | RECTIFIER DIODE | SINGLE | YES | 75 V | 1 | 2 A | 1 | e0 | 200 °C | Tin/Lead (Sn/Pb) | NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV | unknown | EAR99 |