Parametric results for: BSS159N%20H6327 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 9

13 hits Apply

DS Breakdown Voltage-Min (1)

60 V 9

13 hits Apply

Drain Current-Max (ID) (1)

230 mA 10

13 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 9

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

13 hits Apply

5 pF 1 5.9 pF 8

Min (pF) - Max (pF)

13 hits Apply

R-PDSO-G3 9

13 hits Apply

e3 5

13 hits Apply

Manufacturer (1)

Infineon Technologies AG 13

13 hits Apply

1 5

13 hits Apply

Number of Elements (1)

1 10

13 hits Apply

Number of Terminals (1)

3 9

13 hits Apply

DEPLETION MODE 10

13 hits Apply

150.0 °C 7

13 hits Apply

PLASTIC/EPOXY 9

13 hits Apply

RECTANGULAR 9

13 hits Apply

SMALL OUTLINE 9

13 hits Apply

Active 5 Obsolete 8

13 hits Apply

Yes 2

13 hits Apply

260 4 NOT SPECIFIED 4

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

13 hits Apply

360 mW 7

13 hits Apply

Surface Mount (1)

YES 10

13 hits Apply