Parametric results for: EMB3 under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 1 13 BUILT IN BIAS RESISTOR 5 BUILT-IN BIAS RESISTOR 5

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COLLECTOR 13

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Collector Current-Max (IC) (2)

20 mA 4 100 mA 36

Min (A) - Max (A)

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3 pF 1

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Collector-Emitter Voltage-Max (1)

50 V 25

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Configuration (2)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 12 SINGLE WITH BUILT-IN RESISTOR 13

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DC Current Gain-Min (hFE) (6)

30.0 21 60.0 4 80.0 8 100.0 3 120.0 1 200.0 5

Min - Max

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R-PBCC-N3 13 R-PDSO-F6 12

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e2 2 e3 37

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Manufacturer (8)

Infineon Technologies AG 1 Jiangsu Changjiang Electronics Technology Co Ltd 1 Nexperia 18 NXP Semiconductors 18 Oscillatek 1 Philips Semiconductors 2 ROHM Semiconductor 3 Taiwan Semiconductor 2

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1 38

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Number of Elements (2)

1 26 2 16

Min - Max

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Number of Terminals (2)

3 13 6 12

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150.0 °C 7

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-65.0 °C 1

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PLASTIC/EPOXY 25

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RECTANGULAR 25

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CHIP CARRIER 13 SMALL OUTLINE 12

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Active 19 Contact Manufacturer 1 Obsolete 6 Transferred 20

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Yes 2

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260 40

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Polarity/Channel Type (2)

NPN 12 PNP 30

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150 mW 2 200 mW 4 250 mW 14 300 mW 4

Min (W) - Max (W)

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Surface Mount (1)

YES 42

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Transition Frequency-Nom (fT) (4)

180 MHz 7 200 MHz 1 230 MHz 6 250 MHz 2

Min (MHz) - Max (MHz)

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