Parametric results for: H5N2801P under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

280 V 1

3 hits Apply

Drain Current-Max (ID) (1)

60 A 1

3 hits Apply

Drain-source On Resistance-Max (1)

43 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

R-PSFM-T3 1

3 hits Apply

Manufacturer (1)

Renesas Electronics Corporation 3

3 hits Apply

Number of Elements (1)

1 1

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

FLANGE MOUNT 1

3 hits Apply

End Of Life 1 Not Recommended 1 Obsolete 1

3 hits Apply

Yes 3

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

3 hits Apply

150 W 1

3 hits Apply

Surface Mount (1)

NO 1

3 hits Apply