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IDT7130LA55JGB
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | MIL-PRF-38535 Class Q | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 | 3A001.a.2.c | 8542.32.00.41 | |||||
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IDT7130LA55JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 | EAR99 | 8542.32.00.41 | LCC | 52 | ||||
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IDT7130LA55JGI8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | EAR99 | 8542.32.00.41 | |||||||||
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IDT7130LA55JGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 | EAR99 | 8542.32.00.41 | LCC | 52 | |||
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IDT7130LA55JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 110 µA | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | EAR99 | 8542.32.00.41 | ||||||||||
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IDT7130LA55JB
Renesas Electronics Corporation
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Check for Price | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | MIL-PRF-38535 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | PLASTIC, LCC-52 | 3A001.a.2.c | 8542.32.00.41 | ||||||
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IDT7130LA55JG
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 110 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52 | EAR99 | 8542.32.00.41 | |||||||
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IDT7130LA55JB
Integrated Device Technology Inc
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Check for Price | No | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | MIL-PRF-38535 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | PLASTIC, LCC-52 | 3A001.a.2.c | 8542.32.00.41 | LCC | 52 | |||
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IDT7130LA55JB8
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 225 | 38535Q/M;38534H;883B | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | 3A001.a.2.c | 8542.32.00.41 | |||||||||
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IDT7130LA55JGB8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 55 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 140 µA | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | 38535Q/M;38534H;883B | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | 3A001.a.2.c | 8542.32.00.41 |