Parametric results for: IRF7831 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

100.0 mJ 7

13 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

13 hits Apply

DS Breakdown Voltage-Min (1)

30 V 6

13 hits Apply

Drain Current-Max (ID) (1)

21 A 8

13 hits Apply

Drain-source On Resistance-Max (1)

3.6 mΩ 6

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

13 hits Apply

MS-012AA 4

13 hits Apply

R-PDSO-G8 4 R-XDSO-G8 2

13 hits Apply

e0 1 e3 7

13 hits Apply

Manufacturer (2)

Infineon Technologies AG 5 International Rectifier 8

13 hits Apply

1 8

13 hits Apply

Number of Elements (1)

1 8

13 hits Apply

Number of Terminals (1)

8 6

13 hits Apply

ENHANCEMENT MODE 8

13 hits Apply

150.0 °C 5

13 hits Apply

PLASTIC/EPOXY 4 UNSPECIFIED 2

13 hits Apply

RECTANGULAR 6

13 hits Apply

SMALL OUTLINE 6

13 hits Apply

End Of Life 1 Obsolete 7 Transferred 5

13 hits Apply

No 1 Yes 3

13 hits Apply

260 6 NOT SPECIFIED 1

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

13 hits Apply

2.5 W 5

13 hits Apply

Surface Mount (1)

YES 8

13 hits Apply