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IRFS23N20DTRLP
Infineon Technologies AG
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$1.0843 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 24 A | 100 mΩ | 250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 96 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | LEAD FREE, PLASTIC, D2PAK-3 | EAR99 | |||||||||
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IRFS241
Samsung Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 150 V | 1 | 12.5 A | 180 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 83 W | SILICON | R-PSFM-T3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | TO-3P, FULL PACK-3 | EAR99 | TO-3P | 3 | ||||||||||||||
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IRFS23N15DPBF
International Rectifier
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 23 A | 90 mΩ | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 136 W | 92 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | LEAD FREE, PLASTIC, D2PAK-3 | EAR99 | 3 | |||||
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IRFS254A
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 16 A | 140 mΩ | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 100 A | SWITCHING | SILICON | R-PSFM-T3 | e0 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | TO-3PF, 3 PIN | EAR99 | TO-3PF | 3 | |||||||||
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IRFS240
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE | 3 | 200 V | 1 | 12.5 A | 180 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 83 W | SILICON | R-PSFM-T3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | TO-3P, FULL PACK-3 | EAR99 | TO-3P | 3 | ||||||||||||||
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IRFS23N20DTRLPBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 24 A | 100 mΩ | 250 mJ | 65 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 96 A | SWITCHING | SILICON | R-PSSO-G2 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | D2PAK-3/2 | EAR99 | |||||||||||
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IRFS23N15DPBF
Infineon Technologies AG
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 150 V | 1 | 23 A | 90 mΩ | 260 mJ | 65 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 136 W | 92 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | EAR99 | |||||||
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IRFS250
Samsung Semiconductor
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE | 3 | 200 V | 1 | 20.7 A | 85 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 96 W | SILICON | R-PSFM-T3 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | TO-3P, FULL PACK-3 | EAR99 | TO-3P | 3 | ||||||||||||||
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IRFS244
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 10.2 A | 280 mΩ | 455 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 73 W | 64 A | SWITCHING | SILICON | R-PSFM-T3 | e0 | Not Qualified | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN LEAD | THROUGH-HOLE | SINGLE | EAR99 | ||||||||||||
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IRFS244B_FP001
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 10.2 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 73 W | e3 | 150 °C | Matte Tin (Sn) | EAR99 |