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JAN1N5809
Microchip Technology Inc
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$6.6802 | No | Active | 6 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500 | 1 | 175 °C | -65 °C | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||
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JAN1N5809US
Microchip Technology Inc
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$8.2755 | No | Active | 3 A | 875 mV | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS, D-5B, 2 PIN | ||||||||||
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JAN1N5809URS
Microchip Technology Inc
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$17.4371 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | HERMETIC SEALED, GLASS, MELF-2 | ||||||||||||||
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JAN1N5809
Semtech Corporation
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$23.7600 | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | SUPER FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | MIL-19500/477 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | SEMTECH CORP | unknown | G112, 2 PIN | 2 | G112 | EAR99 | 8541.10.00.80 | SEMTECH | |||||||||
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JAN1N5809US
Semtech Corporation
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$28.6700 | Transferred | 6 A | 875 mV | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500/477F | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | 8541.10.00.80 | SEMTECH | ||||||||||||||
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JAN1N5809
MACOM
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Check for Price | Transferred | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-XALF-W2 | MIL-19500 | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | M/A-COM TECHNOLOGY SOLUTIONS INC | compliant | EAR99 | 8541.10.00.80 | |||||||||||||||||
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JAN1N5809CB
Microsemi Corporation
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Check for Price | No | No | Obsolete | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY | ULTRA FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/742 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | not_compliant | HERMETIC SEALED, GLASS, E, 2 PIN | 2 | EAR99 | 8541.10.00.80 | ||||||||
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JAN1N5809X
Bkc Semiconductors Inc
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Check for Price | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||
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JAN1N5809X
Microsemi Corporation
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Check for Price | Obsolete | 6 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | compliant | O-LALF-W2 | EAR99 | 8541.10.00.80 | ||||||||||||||||
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JAN1N5809
Defense Logistics Agency
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Check for Price | Active | 6 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-XALF-W2 | MIL-19500/477F | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | WIRE | AXIAL | DEFENSE LOGISTICS AGENCY | unknown |