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1 - 10 of 15 results
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JANTX2N6788
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 345 mΩ | AVALANCHE RATED | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Qualified | MIL-19500/555 | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | BCY | HERMETIC SEALED, TO-39, 3 PIN | 2 | unknown | EAR99 | ||||||||||
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JANTX2N6788
Microsemi Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 6 A | 300 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 24 A | SWITCHING | SILICON | TO-39 | O-MBCY-W3 | e0 | Qualified | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | MICROSEMI CORP | unknown | EAR99 | ||||||||||||
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JANTX2N6788U
Microsemi Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 4.5 A | 350 mΩ | HIGH RELIABILTY | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 18 A | SWITCHING | SILICON | R-CQCC-N15 | Qualified | MIL-19500 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | MICROSEMI CORP | LCC | CERAMIC, LCC-18/15 | 18/15 | unknown | EAR99 | Microsemi Corporation | |||||||
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JANTX2N6788
Defense Logistics Agency
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 300 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Qualified | -55 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | DEFENSE LOGISTICS AGENCY | unknown | EAR99 | ||||||||||||||||
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JANTX2N6788E3
Microsemi Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 6 A | 300 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-39 | O-MBCY-W3 | Not Qualified | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | MICROSEMI CORP | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 | ||||||||||||||||||||
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JANTX2N6788U
Defense Logistics Agency
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 18 | 100 V | 1 | 4.5 A | 345 mΩ | AVALANCHE ENERGY RATED | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | S-CQCC-N18 | Qualified | MIL-19500/555 | -55 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | SQUARE | CHIP CARRIER | NO LEAD | QUAD | DEFENSE LOGISTICS AGENCY | HERMETIC SEALED, LCC-18 | unknown | EAR99 | |||||||||||||
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JANTX2N6788U
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 18 | 100 V | 1 | 4.5 A | 345 mΩ | AVALANCHE ENERGY RATED | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | S-CQCC-N18 | Qualified | MIL-19500/555 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | SQUARE | CHIP CARRIER | NO LEAD | QUAD | INTERNATIONAL RECTIFIER CORP | LCC | HERMETIC SEALED, TO-39, LCC-18 | 18 | compliant | EAR99 | |||||||||
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JANTX2N6788
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 350 mΩ | AVALANCHE RATED | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Qualified | MIL-19500/555 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | unknown | EAR99 | ||||||||
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JANTX2N6788
Vishay Siliconix
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 6 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | e0 | 150 °C | Tin/Lead (Sn/Pb) | SILICONIX INC | unknown | EAR99 | ||||||||||||||||||||||||||||
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JANTX2N6788
Semicoa Semiconductors
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Check for Price | No | Contact Manufacturer | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 350 mΩ | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 24 A | AMPLIFIER | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | MIL-19500 | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | SEMICOA CORP | HERMETIC SEALED, TO-39, 3 PIN | unknown | EAR99 |