Parametric results for: JANTXV1N3595 under Rectifier Diodes
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JANTXV1N3595A-1
Microchip Technology Inc
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$6.9182 | No | Active | 150 mA | 700 mV | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500/241 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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JANTXV1N3595-1
Microchip Technology Inc
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$8.1299 | No | Active | 150 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 1 | Qualified | O-XALF-W2 | e0 | MIL-19500/241H | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | SIMILAR TO DO-35, 2 PIN | compliant | |||||||||||||||||
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JANTXV1N3595A-1
Microsemi Corporation
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$8.7505 | No | Transferred | 150 mA | 700 mV | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/241 | DO-35 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | DO-35 | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||
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JANTXV1N3595-1
Microsemi Corporation
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$8.7565 | No | No | Transferred | 150 mA | 3 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 1 | Not Qualified | O-XALF-W2 | e0 | MIL-19500/241H | ISOLATED | 2 | UNSPECIFIED | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | SIMILAR TO DO-35, 2 PIN | not_compliant | DO-35 | 2 | EAR99 | 8541.10.00.70 | Microsemi Corporation | |||||||||||
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JANTXV1N3595US
Microchip Technology Inc
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$14.6751 | No | Active | 150 mA | 1 V | SILICON | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | 500 mA | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | LEADLESS, GLASS, MELF-2 | compliant | |||||||||||||||||
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JANTXV1N3595AUR-1
Microchip Technology Inc
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$14.7883 | No | Active | 150 mA | 700 mV | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | 4 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/241 | DO-213AA | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||||
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JANTXV1N3595AUS
Microchip Technology Inc
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$14.7883 | No | Active | 150 mA | 700 mV | 3 µs | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | 4 A | 1 | 175 °C | MICROCHIP TECHNOLOGY INC | compliant | ||||||||||||||||||||||||||||
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JANTXV1N3595UR-1
Microchip Technology Inc
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$16.7922 | No | Active | 150 mA | 3 µs | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | METALLURGICALLY BONDED | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500/241H | DO-213AA | 1 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | GLASS, SIMILAR TO DO-213AA, 2 PIN | compliant | ||||||||||||||
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JANTXV1N3595AUS
Microsemi Corporation
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$17.2040 | No | Transferred | 150 mA | 700 mV | 3 µs | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | 4 A | 1 | Not Qualified | 175 °C | MICROSEMI CORP | compliant | EAR99 | Microsemi Corporation | |||||||||||||||||||||||||
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JANTXV1N3595
Microsemi Corporation
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Check for Price | No | No | Obsolete | 150 mA | 1 V | 3 µs | 1 nA | 500 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 150 V | 1 | METALLURGICALLY BONDED | 4 A | 1 | Not Qualified | O-LALF-W2 | e0 | MIL-19500/241 | DO-35 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | HERMETIC SEALED, GLASS PACKAGE-2 | not_compliant | DO-35 | 2 | EAR99 | 8541.10.00.70 |