Parametric results for: MBM29F400TA-90PFTN under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Data Polling Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

90 ns 3

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MINIMUM 100000 WRITE/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; AUTOMATIC WRITE 1 USER CONFIGURABLE AS 256K X 16; MINIMUM 100000 WRITE/ERASE CYCLES; AUTOMATIC WRITE 1

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8 3

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TOP 3

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YES 2

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YES 2

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100000.0 Write/Erase Cycles 2

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R-PDSO-G48 3

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e0 2

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18.4 mm 3

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Manufacturer (2)

FUJITSU Limited 2 FUJITSU Semiconductor Limited 1

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Memory Density (1)

4.1943 Mbit 3

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FLASH 3

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Memory Width (2)

8 2 16 1

Min - Max

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1.0 3

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1,2,1,7 2

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48 3

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262.144 k 1 524.288 k 2

Min (words) - Max (words)

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256000.0 1 512000.0 2

Min - Max

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ASYNCHRONOUS 3

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70.0 °C 2 85.0 °C 1

Min (°C) - Max (°C)

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-40.0 °C 1 -20.0 °C 1 0.0 °C 1

Min (°C) - Max (°C)

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Organization (2)

256K16 1 512KX8 2

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3-STATE 1

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PLASTIC/EPOXY 3

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TSOP1 3

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TSSOP48,.8,20 2

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RECTANGULAR 3

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SMALL OUTLINE, THIN PROFILE 3

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Sector Size (1)

16K,8K,32K,64K 2

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Supply Voltage-Nom (Vsup) (1)

5 V 3

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